IMZ2A Unisonic Technologies, IMZ2A Datasheet - Page 2

• Manufacturer Part Number: IMZ2A
• Description: Power Management Dual Transistor
• Manufacturer: Unisonic Technologies

IMZ2A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Total)
Junction Temperature
Storage Temperature
Note: 1. 200mW per element must not be exceeded.
TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
TR2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note: Transition frequency of the device.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
ELECTRICAL CHARACTERISTICS
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
SYMBOL
V
V
BV
BV
BV
BV
BV
BV
CE(SAT)
CE(SAT)
Cob
Cob
I
I
I
I
h
h
CBO
EBO
CBO
EBO
f
f
FE
FE
CBO
CEO
EBO
T
CBO
CEO
EBO
T
(Ta=25℃)
(Ta=25℃)
Ic= -50µA
Ic= -1mA
I
V
V
Ic / I
V
V
(Note)
V
Ic=50µA
Ic= 1mA
I
V
V
Ic / I
V
V
(Note)
V
E
E
CB
EB
CE
CE
CB
CB
EB
CE
CE
CB
= -50µA
= 50µA
= -60V
= -6V
= -6V, Ic= -1mA
=-12V, I
= -12V,I
=60V
=7V
= 6V, Ic= 1mA
=12V, I
= 12V, I
B
B
TEST CONDITIONS
= -50mA/-5mA
= 50mA/5mA
E
E
SYMBOL
E
E
=-2mA, f=100MHz
=0A, f=1MHz
=2mA, f=100MHz
=0A, f=1MHz
V
V
V
T
Pc
T
CBO
CEO
EBO
I
STG
C
J
-150
TR1
-60
-50
-6
300 (Note 1)
-55~+150
LIMITS
DUAL TRANSISTOR
150
MIN
120
120
-60
-50
60
50
-6
7
TR2
150
TYP
60
50
140
180
7
4
2
QW-R215-002,B
MAX
-0.1
-0.1
-0.5
560
560
0.1
0.1
0.4
3.5
5
-
UNIT
2 of 2
mW
mA
°C
°C
V
V
V
UNIT
MHz
MHz
µA
µA
µA
µA
pF
pF
V
V
V
V
V
V
V
V
-