NP0G3A0 Panasonic Corporation of North America, NP0G3A0 Datasheet - Page 2

• Manufacturer Part Number: NP0G3A0
• Description: Transistor With Builtin Resistors
• Manufacturer: Panasonic Corporation of North America

NP0G3A0
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
• Tr1
• Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Common characteristics chart
140
120
100
80
60
40
20
0
0
Ambient temperature T
Parameter
Parameter
40
P
T
 T
80
a
This product complies with the RoHS Directive (EU 2002/95/EC).
a
( °C )
120
a
= 25°C ± 3°C
Symbol
Symbol
V
V
V
V
V
V
I
I
I
V
I
I
I
V
V
V
CE(sat)
CE(sat)
h
h
CBO
CBO
CEO
EBO
R
CEO
EBO
R
f
f
CBO
CEO
CBO
CEO
FE
OH
OL
FE
OH
OL
T
T
1
1
I
I
V
V
V
V
I
V
V
V
I
I
V
V
V
V
I
V
V
V
C
C
C
C
C
C
CB
CB
CB
CE
EB
CE
CC
CC
CB
CE
EB
CE
CC
CC
= −10 µA, I
= −2 mA, I
= −10 mA, I
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJJ00291BED
= −10 V, I
= 10 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= 50 V, I
= 5 V, V
= 5 V, V
B
C
E
E
Conditions
Conditions
B
B
B
B
B
C
C
E
= 0
= 0
E
E
= 0
B
B
B
= −2 mA, f = 200 MHz
B
C
E
= 5 mA
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 0
= 0
= 0
= 1 mA, f = 200 MHz
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
L
L
= 1 kΩ
= 1 kΩ
L
L
= 1 kΩ
= 1 kΩ
−30%
−30%
−4.9
Min
−50
−50
Min
160
160
4.9
50
50
Typ
Typ
150
47
80
47
− 0.01
− 0.25
+30%
+30%
− 0.1
− 0.5
− 0.2
Max
Max
0.01
0.25
460
460
0.1
0.5
0.2
MHz
MHz
Unit
Unit
mA
mA
µA
µA
kΩ
µA
µA
kΩ


V
V
V
V
V
V
V
V
V
V