NP0A456 Panasonic Corporation of North America, NP0A456 Datasheet
NP0A456
Manufacturer Part Number
NP0A456
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.NP0A456.pdf
(3 pages)
Composite Transistors
NP0A456
Silicon PNP epitaxial planar type
For High speed switching
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
• Suitable for high-density mounting and downsizing of the equip-
• Automatic insertion with the taping is possible
• 2SA2082 × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
ment
Parameter
Parameter
*
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
CEO
EBO
a
CP
I
I
stg
h
h
C
CE(sat)
C
T
CBO
t
t
j
EBO
t
f
= 25°C
FE1
FE2
off
stg
on
T
ob
−55 to +125
Rating
V
V
V
V
I
V
V
Refer to the switching time measurement circuit
−100
C
−15
−15
−50
125
125
CB
EB
CE
CE
CB
CB
−4
= −10 mA, I
SJJ00269BED
= −3 V, I
= −1 V, I
= −1 V, I
= −10 V, I
= −8 V, I
= −5 V, I
Conditions
Unit
mW
C
C
C
mA
mA
E
E
°C
°C
E
V
V
V
B
= 0
= 0
= −10 mA
= −1 mA
= 0, f = 1 MHz
= 10 mA, f = 200 MHz
= −1 mA
Marking Symbol: 3E
Internal Connection
1: Base (Tr1)
2: Emitter (Tr1)
3: Base (Tr2)
Display at No.1 lead
6
1
(0.35) (0.35)
0.12
1.00
5
2
+0.03
-0.02
±0.05
Min
4
800
3
50
30
Tr1
6
1
1 500
− 0.1
Typ
12
20
19
5
2
1
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
4
3
Tr2
− 0.1
− 0.1
− 0.2
Max
150
Unit: mm
0 to 0.02
MHz
Unit
µA
µA
pF
ns
ns
ns
V
1
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NP0A456 Summary of contents
Page 1
... Composite Transistors NP0A456 Silicon PNP epitaxial planar type For High speed switching ■ Features • Suitable for high-density mounting and downsizing of the equip- ment • Automatic insertion with the taping is possible ■ Basic Part Number • 2SA2082 × 2 ■ Absolute Maximum Ratings T ...
Page 2
... NP0A456 Switching time measurement circuit test circuit on off = −1 Ω 2 kΩ V 0.1 µF 52 Ω OUT Ω 90% 90% V 10% OUT off = −5 9 Ground = −8 140 120 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...