HBD237 Hi-Sincerity Microelectronics Corp., HBD237 Datasheet
HBD237
Related parts for HBD237
HBD237 Summary of contents
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... HI-SINCERITY MICROELECTRONICS CORP. HBD237 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD237 is designed for medium power linear and switching applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25 C) .................................................................................... 25 W Maximum Voltages and Currents BVCBO Collector to Base Voltage ...
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... HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 Factory ...