HBD139 Hi-Sincerity Microelectronics Corp., HBD139 Datasheet

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HBD139

Manufacturer Part Number
HBD139
Description
Npn Power Transistors
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet
HBD139
NPN POWER TRANSISTORS
Description
PNP power transistor in a TO-126 plastic package. NPN complements:
HBD140
Features
Applications
Driver stages in hi-fi amplifiers and television circuits.
Limiting Values
Electrical Characteristics
*hFE1/hFE2
HBD139
High Current (max. 1.5A)
Low Voltage (max. 80V)
*VCE(sat)
Symbol
Symbol
ICBO
VCBO
VCEO
IEBO
*VBE
VEBO
Tamb
hFE
ICM
Tstg
IBM
PD
fT
IC
Tj
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
DC current gain ratio of
the complementary pairs
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Total Dissipation at
Storage Temperature
Junction Temperature
Operating Ambient Temperature
HI-SINCERITY
MICROELECTRONICS CORP.
Parameter
Parametor
(Tj=25 C, unless otherwise specified)
IE=0, VCB=30V
IC=0, VEB=5V
IC=500mA, IB=50mA
IC=500mA, VCE=2V
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA,
IC=50mA, VCE=5V, f=100MHz
|IC|=150mA, |VCE|=2V
Conditions
Open Emitter
Open Base
Open Collector
Ta=25 C
Tc=25 C
-
-
-
Conditions
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
Min.
-65
-65
-
-
-
-
-
-
-
-
-
Min.
40
63
25
-
-
-
-
-
-
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 1/3
HSMC Product Specification
Typ. Max.
240
0.9
Max.
-
-
-
-
-
-
-
100
150
150
150
1.5
1.2
80
15
2
1
5
100
100
250
0.5
1.6
1
-
-
-
Unit
W
W
A
V
V
V
A
A
MHz
C
C
C
Unit
nA
nA
V
V
-
-
-
-

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HBD139 Summary of contents

Page 1

... Collector Cut-off Current IEBO Emitter Cut-off Current Collector-Emitter *VCE(sat) Saturation Voltage *VBE Base-Emitter Voltage hFE DC Current Gain fT Transition Frequency DC current gain ratio of *hFE1/hFE2 the complementary pairs HBD139 Conditions Open Emitter Open Base Open Collector Ta=25 C Tc= (Tj=25 C, unless otherwise specified) Conditions IE=0, VCB=30V IC=0, VEB=5V IC=500mA, IB=50mA ...

Page 2

... Collector Current-I (mA) C Saturation Voltage & Collector Current 1000 V CE(sat) 100 1 10 100 Collector Current-I (mA) C Safe Operating Arae 10 1 0.1 0. Forward Voltage (V) HBD139 1000 100 10 1000 10000 1 1000 @ I =10I C B 100 1000 10000 0.1 PT=1mS PT=100mS PT=1S 100 1000 Spec. No. : Preliminary Data Issued Date : 2001 ...

Page 3

... Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HBD139 Style : Pin 1.Emitter 2.Collector 3.Base ...

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