HBD675 Hi-Sincerity Microelectronics Corp., HBD675 Datasheet
HBD675
Related parts for HBD675
HBD675 Summary of contents
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... HI-SINCERITY MICROELECTRONICS CORP. HBD675 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD675 is designed for use as output devices in complementary general purpose amplifier applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25 C) .................................................................................... 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage ...
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HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 10000 1000 100 100 1000 Collector Current (mA) On Voltage & Collector Current VCE=3V BE(on) 1 0.1 100 1000 Collector Current (mA) Safe Operating Area 100 10 ...
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... HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 Factory ...