HBDM60V600W Diodes, Inc., HBDM60V600W Datasheet

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HBDM60V600W

Manufacturer Part Number
HBDM60V600W
Description
Complex Transistor Array For Bipolar Transistor Half H-bridge Motor/actuator Driver
Manufacturer
Diodes, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HBDM60V600W-7
Manufacturer:
DIODES
Quantity:
180
Mechanical Data
Features
Maximum Ratings: Total Device
Maximum Ratings: Sub-Component Devices
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Junction Temperature Range
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Notes:
DS30701 Rev. 4 - 2
Sub-Component P/N
MMBT2907A_DIE
Epitaxial Planar Die Construction
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Schematic & Pin Configuration
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 6
Ordering Information: See Page 6
Weight: 0.016 grams (approximate)
MMBTA06_DIE
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document
1. No purposefully added lead.
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
Reference
Q1
Q2
PNP Transistor
NPN Transistor
@T
Device Type
A
= 25°C unless otherwise specified
Symbol
www.diodes.com
V
V
V
TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
CBO
CEO
EBO
I
C
1 of 7
Symbol
@T
V
R
P
EBO
θ JA
d
A
= 25°C unless otherwise specified
Q1-PNP Transistor
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR
(MMBT2907A)
-600
-5.5
-60
-60
Schematic & Pin Configuration
MMBT2907A
1
CQ1
BQ1
2
HBDM60V600W
HBDM60V600W
Q1
-55 to +150
3
Value
200
625
EQ1
BQ2
MMBTA06
6
Q2-NPN Transistor
SOT-363
5
(MMBTA06)
EQ2
CQ2
Q2
4
500
80
65
6
© Diodes Incorporated
HBDM60V600W
°C/W
Unit
mW
°C
Unit
mA
V
V
V

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HBDM60V600W Summary of contents

Page 1

... CBO V -60 CEO V -5.5 EBO -600 www.diodes.com HBDM60V600W HBDM60V600W SOT-363 2 3 CQ1 EQ1 EQ2 Q1 Q2 MMBTA06 BQ1 BQ2 CQ2 Value Unit 200 mW 625 °C/W -55 to +150 °C Q2-NPN Transistor Unit (MMBTA06 500 mA HBDM60V600W © Diodes Incorporated ...

Page 2

... 90V 30V 5V ⎯ 1V 10mA CE C ⎯ 1V 100mA 100mA 10mA 1V 100mA 100mA 5mA 20V 10mA 100MHz HBDM60V600W © Diodes Incorporated ...

Page 3

... 100mA 1mA 30mA C 1 0.01 0 BASE CURRENT (mA) B Fig. 3 Typical Collector Saturation Region 150° 25° -50° 100 -I , COLLECTOR CURRENT (mA) C Fig. 5 Typical DC Current Gain vs. Collector Current © Diodes Incorporated 100 1,000 HBDM60V600W ...

Page 4

... COLLECTOR CURRENT (mA 30mA 10mA 100mA 1mA 0.001 0.01 0 BASE CURRENT (mA) B, Fig. 9 Typical Collector Saturation Region 100 I , COLLECTOR CURRENT (mA) C Fig. 11 Typical DC Current Gain vs. Collector Current HBDM60V600W © Diodes Incorporated 100 100 1,000 ...

Page 5

... www.diodes.com I , COLLECTOR CURRENT (mA HBDM60V600W © Diodes Incorporated 10 ...

Page 6

... Shipping 3000/Tape & Reel 2010 2011 X Y Aug Sep Oct Nov HBDM60V600W © Diodes Incorporated 2012 Z Dec D ...

Page 7

... President of Diodes Incorporated. DS30701 Rev SOT-363 Dim α All Dimensions Dimensions Typical dimensions in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 Nominal 0.30 0.40 1.80 2.20 − 0.10 0.90 1.00 0.25 0.40 0.10 0.25 0° 8° SOT-363 2.5 1.3 0.42 0.6 1.9 0.65 HBDM60V600W © Diodes Incorporated ...

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