HSG1002 Renesas Electronics Corporation., HSG1002 Datasheet - Page 2

• Manufacturer Part Number: HSG1002
• Description: Sigehbt High Frequency Low Noise Amplifier
• Manufacturer: Renesas Electronics Corporation.

Item
DC current transfer ratio
Reverse Transfer Capacitance
Transition Frequency
Insertion power gain
Maximum Stable Gain
Power Gain
Noise figure
Maximum Available Gain
HSG1002
Electrical Characteristics
Notes: 1. MSG = |S
Rev.1.00, Apr.12.2004, page 2 of 37
2. MAG = |S
note1
21
21
| / |S
| / |S
note2
12
12
|
|(K-(K
Symbol
h
C
f
|S21|
MSG
PG
NF
MAG
T
FE
re
2
-1)
2
1/2
)
Min
100
8
Typ
200
0.09
38
18.5
16.5
11
21
20
16
19.5
17.5
11
0.7
0.8
1.2
13
Max
300
1.8
Unit
pF
GHz
dB
dB
dB
dB
dB
Test conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CE
CB
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
= 0, f = 1 MHz
= 5 mA
= fT peak, f = 1 GHz
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
= 10 mA, f = 5.8 GHz
(Ta = 25°C)