BFY420 Infineon Technologies Corporation, BFY420 Datasheet - Page 3

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BFY420

Manufacturer Part Number
BFY420
Description
Hirel Silicon Bipolar Transistors Hirel Npn Silicon Rf Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
Collector emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 1.8 GHz
Power gain
I
Z
Transducer gain
I
f = 1.8 GHz
1dB Compression point
I
Z
C
C
C
C
C
G ms =  S 21 / S 12 
S
L
CB
CE
EB
= 30 mA, V
= 5 mA, V
= 20 mA, V
= 20 mA, V
= 20 mA, V
= Z
= Z
= 0.5 V, V
= 2 V, V
= 2 V, V
Lopt
Sopt
, f = 1.8 GHz
, Z
CE
BE
BE
L
CE
CE
CE
CE
CB
= Z
= 2 V, Z
= v
= v
= 3 V, f = 2.0 GHz
= 2 V, f = 1.8 GHz,
= 2 V, Z
= 2 V, Z
= v
Lopt
be
be
cb
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
S
S
S
= Z
= Z
= Z
Sopt
L
Sopt
A
= 50 ,
= 25°C, unless otherwise specified
,
,
3
Symbol
f
C
C
C
F
G
| S
P
T
-1dB
cb
ce
eb
ms
21e
1)
|
2
min.
20
14
-
-
-
-
-
-
Values
0.14
0.46
0.67
typ.
1.1
22
21
18
12
max.
0.85
0.9
3.0
1.7
2007-08-17
-
-
-
-
BFY420
Unit
GHz
pF
dB
dB
dBm

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