NESG220033 Renesas Electronics Corporation., NESG220033 Datasheet

no-image

NESG220033

Manufacturer Part Number
NESG220033
Description
Npn Silicon Germanium Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG220033-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Document No. PU10766EJ03V0DS (3rd edition)
Date Published November 2009 NS
Printed in Japan
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
• P
• OIP
• Maximum stable power gain: MSG =14.0 dB TYP. @ V
• SiGe HBT technology (UHS2) : f
• This product is improvement of ESD of NESG2xxx series.
• 3-pin minimold (33 PKG)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG220033
NESG220033-T1B
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Base Current
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, please contact your nearby sales office.
Notes 1. Depend on the ESD protect device.
NF = 0.75 dB TYP. @ V
Part Number
O (1 dB)
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
3
= 35 dBm TYP. @ V
2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
= 21.5 dBm TYP. @ V
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
Unit sample quantity is 50 pcs.
Note 1
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
NESG220033-A
NESG220033-T1B-A
Order Number
CE
CE
= 5 V, I
= 5 V, I
CE
NPN SiGe RF TRANSISTOR FOR
T
= 5 V, I
Symbol
= 12.5 GHz
C
P
NPN SILICON GERMANIUM RF TRANSISTOR
V
V
V
tot
T
= 10 mA, f = 1 GHz
C (set)
CBO
CEO
I
I
T
CES
3-PIN MINIMOLD (33 PKG)
C
stg
The mark <R> shows major revised points.
B
Note 2
j
3-pin minimold
(33 PKG) (Pb-Free)
C (set)
A
= 40 mA, f = 1 GHz
= +25°C)
Package
DATA SHEET
= 40 mA, f = 1 GHz
−65 to +150
Ratings
200
480
150
5.5
5.5
13
36
CE
= 5 V, I
50 pcs
(Non reel)
3 kpcs/reel
Quantity
C
= 40 mA, f = 1 GHz
Unit
mW
mA
mA
°C
°C
V
V
V
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side
NESG220033
of the tape
Supplying Form
2009

Related parts for NESG220033

NESG220033 Summary of contents

Page 1

... 200 C Note 2 P 480 tot T 150 j −65 to +150 T stg The mark <R> shows major revised points. NESG220033 Supplying Form • wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Unit °C °C 2009 ...

Page 2

... Lopt OIP mA GHz (set) Δ MHz Sopt L Lopt μ s, Duty Cycle ≤ 2% Data Sheet PU10766EJ03V0DS NESG220033 Unit °C/W Unit mA MIN. TYP. MAX. Unit − − 100 nA − − 100 nA − 140 180 260 − ...

Page 3

... 0.1 0.01 0.001 0.0001 0.8 0.9 0.4 (V) BE μ μ 1 300 A μ 1 100 A μ 900 A μ 700 A μ 500 A μ 300 A μ 100 (V) CE Data Sheet PU10766EJ03V0DS NESG220033 MHz Collector to Base Voltage V ( 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage V ( ...

Page 4

... Remark The graphs indicate nominal characteristics CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 000 0.1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 1 Data Sheet PU10766EJ03V0DS NESG220033 100 10 1 000 Collector Current I (mA 100 Collector Current I (mA) C ...

Page 5

... MSG 0.1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 100 1 Data Sheet PU10766EJ03V0DS NESG220033 MSG MAG MAG MSG 21e 1 10 Frequency f (GHz MSG ...

Page 6

... P out (each) 0 –10 200 –20 –30 –40 100 –50 –60 –70 0 – –20 Data Sheet PU10766EJ03V0DS NESG220033 10 100 Collector Current I (mA mA, C (set 1.000 GHz 1.001 GHz – Each Input Power P ...

Page 7

... PACKAGE DIMENSIONS 3-PIN MINIMOLD (33 PKG) (UNIT: mm) 2.8±0.2 +0.1 1.5 0.65 –0. Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Data Sheet PU10766EJ03V0DS NESG220033 7 ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Please check with an NEC Electronics sales NESG220033 M8E0904E ...

Related keywords