BFQ81 Vishay, BFQ81 Datasheet

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BFQ81

Manufacturer Part Number
BFQ81
Description
Silicon Npn Planar Rf Transistor
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFQ81-GS08
Manufacturer:
VISHAY/威世
Quantity:
20 000
Silicon NPN Planar RF Transistor
Features
Applications
RF amplifier up to 2 GHz, especially for mobile
telephone.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
Maximum Thermal Resistance
1)
Document Number 85023
Rev. 1.5, 28-Apr-05
• Small feedback capacitance
• Low noise figure
• Low cross modulation
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
BFQ81
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient
amb
on glass fibre printed board (25 x 20 x 1.5) mm
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Part
Parameter
Parameter
BFQ81-GS08
Ordering code
T
1)
amb
≤ 60 °C
Test condition
Test condition
3
plated with 35 μm Cu
RA
e3
Marking
Symbol
Symbol
V
V
V
R
T
P
CBO
CEO
EBO
I
T
thJA
stg
C
tot
j
Tape and Reel
Electrostatic sensitive device.
Observe precautions for handling.
Remarks
- 65 to + 150
Vishay Semiconductors
Value
Value
200
150
450
25
16
30
2
2
1
SOT-23
3
BFQ81
18991
Package
www.vishay.com
K/W
Unit
mW
Unit
mA
°C
°C
V
V
V
1

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BFQ81 Summary of contents

Page 1

... Tape and Reel Test condition Symbol V CBO V CEO V EBO tot stg Test condition Symbol R thJA plated with 35 μ BFQ81 Vishay Semiconductors 18991 Electrostatic sensitive device. Observe precautions for handling. Remarks Package SOT-23 Value Unit 200 mW 150 ° ...

Page 2

... BFQ81 Vishay Semiconductors Electrical DC Characteristics °C, unless otherwise specified amb Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown mA voltage Collector-emitter saturation mA voltage DC forward current transfer ratio V ...

Page 3

... BFQ81 Vishay Semiconductors S12 S22 LIN ANG LIN ANG MAG MAG deg deg 0.045 72.3 0.939 -14.2 0.098 50.7 0.720 -30.3 0.120 42.0 0.576 -35.3 0.136 39.4 0.477 -37.3 0.144 40.4 0.447 -38.7 0.152 42.6 0.424 -40 ...

Page 4

... BFQ81 Vishay Semiconductors /mA f/MHz CE C 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 6 5 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 6 10 100 300 500 800 1000 1200 1500 ...

Page 5

... BFQ81 Vishay Semiconductors S12 S22 LIN ANG LIN ANG MAG MAG deg deg 0.036 70.64 0.482 -20.7 0.055 73.69 0.445 -15.7 0.084 74.84 0.440 -13.9 0.105 74.36 0.445 -15.0 0.125 73.34 0.447 -17.0 0.154 71.71 0.444 -20 ...

Page 6

... BFQ81 Vishay Semiconductors /mA f/MHz CE C 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 10 20 100 300 500 800 1000 1200 1500 1800 2000 2200 0.2.64 2500 2800 3000 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 300 ...

Page 7

... I - Collector Current ( mA ) 12873 C Figure 4. Noise Figure vs. Collector Current Ω Sopt = GHz Collector Current ( mA ) 12874 C Figure 5. Noise Figure vs. Collector Current Document Number 85023 Rev. 1.5, 28-Apr- BFQ81 Vishay Semiconductors www.vishay.com 7 ...

Page 8

... BFQ81 Vishay Semiconductors = 50 Ω mA j0.5 j0.2 3.0 GHz 2 0.2 2 1.0 0.3 -j0.2 0.1 -j0.5 13502 -j Figure 6. Input Reflection Coefficient S 21 90° 60 ° 120° 0.1 150° 0.3 1.0 180° 10 3.0 GHz -150 ° -60° -120 ° 13 504 -90° Figure 7. Forward Transmission Coefficient www.vishay.com 150° ...

Page 9

... Package Dimensions in mm (Inches) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 3.1 (.122) 2.8 (.110) 0.4 (.016 0.95 (.037) 0.95 (.037) Document Number 85023 Rev. 1.5, 28-Apr-05 0.175 (.007) 0.098 (.005) 2.6 (.102) 2.35 (.092) 0.52 (0.020) 0.9 (0.035) 2.0 (0.079) 0.95 (0.037) 0.95 (0.037) BFQ81 Vishay Semiconductors ISO Method E 17418 www.vishay.com 9 ...

Page 10

... BFQ81 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 11

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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