2SA1306A Inchange Semiconductor Company, 2SA1306A Datasheet
2SA1306A
Manufacturer Part Number
2SA1306A
Description
Isc Silicon Pnp Power Transistors
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SA1306A.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Good Linearity of h
·High Collector-Emitter Breakdown Voltage-
·Complement to Type 2SC3298/A/B
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
isc Website：www.iscsemi.cn
SYMBOL
V
V
V
V
T
P
T
CBO
CEO
EBO
I
I
(BR)CEO
stg
C
B
C
J
B
Silicon PNP Power Transistors
= -180V(Min)-2SA1306A
= -160V(Min)-2SA1306
= -200V(Min)-2SA1306B
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
C
=25℃
PARAMETER
FE
2SA1306
2SA1306A
2SA1306B
2SA1306
2SA1306A
2SA1306B
℃)
-55~150
VALUE
-0.15
-160
-180
-200
-160
-180
-200
-1.5
150
20
-5
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
2SA1306/A/B
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2SA1306A Summary of contents
Page 1
... INCHANGE Semiconductor isc Silicon PNP Power Transistors DESCRIPTION ·Good Linearity ·High Collector-Emitter Breakdown Voltage -160V(Min)-2SA1306 (BR)CEO = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 SYMBOL PARAMETER Collector-Base V CBO Voltage ...
Page 2
... Emitter Cutoff Current EBO h DC Current Gain FE f Current-Gain—Bandwidth Product T C Output Capacitance OB h Classifications 70-140 120-240 isc Website：www.iscsemi.cn CONDITIONS 2SA1306 I = -10mA 2SA1306A C B 2SA1306B I = -500mA -50mA -500mA - -160V -5V -100mA ...