NE24283B Renesas Electronics Corporation., NE24283B Datasheet
NE24283B
Related parts for NE24283B
NE24283B Summary of contents
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... GATE LENGTH: 0.25 m • GATE WIDTH: 200 m • HERMETIC METAL/CERAMIC PACKAGE DESCRIPTION The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GSO I Drain Current DS I Gate Current GRF T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T Note: 1. ...
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... TYPICAL COMMON SOURCE SCATTERING PARAMETERS j1.0 j0.5 18 GHz j0.2 18 GHz 0.0 0.0 0.2 0.5 -j0.2 -j0.5 -j1.0 NE24283B FREQUENCY S 11 GHz MAG ANG 0.10 0.999 -1.9 0.20 0.999 -3.8 0.50 0.998 -9.5 1.00 0.989 -18.8 1.50 0.976 -27.8 2.00 0.960 -36.7 2.50 0.940 -45.3 3.00 0.920 -53.6 3.50 0.900 -61.6 4.00 0.878 -69.7 4.50 0.852 -77.4 5.00 0.828 -84.5 5.50 0.806 -91.6 6.00 0.784 -97.9 6.50 0.769 -104.3 7.00 0.753 -110.3 7.50 0.739 -115.8 8.00 0.728 -121.3 8.50 0.710 -126.7 9 ...
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... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION PART NUMBER NE24283B 1. Source 2. Drain 3. Source 4. Gate 0.5 ...