3SK0268 Panasonic Corporation of North America, 3SK0268 Datasheet

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3SK0268

Manufacturer Part Number
3SK0268
Description
Gaas N-channel Mes Fet
Manufacturer
Panasonic Corporation of North America
Datasheet
High Frequency FETs
3SK268
Silicon N-Channel 4-pin MOS FET
For VHF amplification
Drain to Source voltage
Gate 1 to Source voltage
Gate 2 to Source voltage
Drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate 1 cut-off current
Gate 2 cut-off current
Drain to Source voltage
Gate 1 to Source cut-off voltage
Gate 2 to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Power gain
Noise figure
Low noise-figure (NF)
Large power gain PG
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
Features
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
Symbol
V
V
V
I
P
T
T
Symbol
I
I
I
V
V
V
| Y
C
C
C
PG
NF
D
DSS
G1SS
G2SS
D
ch
stg
iss
oss
rss
DS
G1S
G2S
DSX
G1SC
G2SC
fs
(Ta = 25°C)
|
(Ta = 25°C)
V
V
V
I
V
V
V
V
f = 1MHz
V
f = 190 to 210MHz (Sweep)
D
DS
DS
DS
DS
DS
DS
DS
DS
55 to +150
Ratings
= 50 A, V
= 10V, I
= 10V, V
= V
= V
= 10V, V
= 10V, V
= 10V, V
= 8V, I
±30
150
150
±8
±8
15
G2S
G1S
D
D
Conditions
= 0, V
= 0, V
= 10mA, V
G1S
= 8mA, V
G1S
G1S
G2S
G1S
= 5V, V
= V
= 0, V
= 4V, I
= 4V, I
G1S
G2S
Unit
mW
mA
°C
°C
V
V
V
G2S
G2S
= ±8V
= ±8V
G2S
G2S
= 4V, f = 1kHz
D
D
= 5V
G2S
= 100 A
= 100 A
= 3V
= 4V
= 0
Marking Symbol: AE
min
3.5
15
14
15
1.5
1.5
0
1
0.2±0.1
0.02
0.425
typ
1.5
1.7
20
20
5
S-Mini Type Package (4-pin)
1.25±0.10
2.1±0.1
max
±20
±20
0.5
0.5
6.2
2.2
26
8
3
0.425
EIAJ: SC-82
1: Drain
2: Source
3: Gate1
4: Gate2
unit: mm
Unit
mA
mS
nA
nA
dB
dB
pF
pF
pF
V
V
V
1

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3SK0268 Summary of contents

Page 1

High Frequency FETs 3SK268 Silicon N-Channel 4-pin MOS FET For VHF amplification Features Low noise-figure (NF) Large power gain PG S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. Absolute Maximum Ratings Parameter ...

Page 2

High Frequency FETs 200 175 150 125 100 100 120 140 160 Ambient temperature Ta ( ˚ G2S 48 V =10V DS Ta=25˚C 40 ...

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