CGH09120F Cree, Inc., CGH09120F Datasheet - Page 3

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CGH09120F

Manufacturer Part Number
CGH09120F
Description
120 W, Uhf - 2.5 Ghz, Gan Hemt For Wcdma, Lte, Mc-gsm
Manufacturer
Cree, Inc.
Datasheet
Typical Pulse Performance
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
3
V
DS
CGH09120F Rev 0.2 Preliminary
V
= 28 V, I
DS
= 28 V, I
Typical Pulsed Output Power, Drain Efficiency, and Gain vs Input Power
of the CGH09120F measured in CGH09120F-TB Amplifier Circuit.
of the CGH09120F measured in CGH09120F-TB Amplifier Circuit.
DS
= 1.0 A, P
DS
54.0
53.6
53.2
52.8
52.4
52.0
52.0
51.6
51.2
50.8
50.4
50.0
80
70
60
50
40
40
30
20
10
= 1.0 A, Freq = 870 MHz, Pulse Width = 40 μS, Duty Cycle = 5 %
0
700
0
Typical Pulsed Saturated Power vs Frequency
SAT
5
750
= 10 mA I
10
800
15
Input Power (dBm)
GS
Frequency (MHz)
Efficiency
Peak, Pulse Width = 40 μS, Duty Cycle = 5 %
Output
Power
Drain
Psat
850
20
Gain
Drain
Efficiency
25
900
30
Output Power
Drain Efficiency
Gain
Psat
Psat
Drain Efficiency
950
35
1000
40
25
23
21
19
17
17
15
13
11
9
100
90
80
70
60
50
50
40
30
20
10
0
USA Tel: +1.919.313.5300
www.cree.com/wireless
Fax: +1.919.869.2733
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.

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