NE5531079A Renesas Electronics Corporation., NE5531079A Datasheet

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NE5531079A

Manufacturer Part Number
NE5531079A
Description
7.5 V Operation Silicon Rf Power Ldmos Fet For Uhf-band 10 W Transmission Amplifiers
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
NE5531079A-A
Manufacturer:
RENESAS
Quantity:
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Part Number:
NE5531079A-T1-A
Manufacturer:
FSC
Quantity:
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Document No. PU10752EJ01V0DS (1st edition)
Date Published April 2009 NS
Printed in Japan
DESCRIPTION
power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a
surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz
under the 7.5 V supply voltage.
FEATURES
• High output power
• High power added efficiency :
• High linear gain
• Surface mount package
• Single supply
APPLICATIONS
• 460 MHz band radio systems
• 900 MHz band radio systems
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE5531079A
NE5531079A-T1
NE5531079A-T1A
Remark To order evaluation samples, please contact your nearby sales office.
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission
Part Number
Part number for sample order: NE5531079A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
7.5 V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
NE5531079A-A
NE5531079A-T1A-A
NE5531079A-T1-A
Order Number
: P
: G
: 5.7 × 5.7 × 1.1 mm MAX.
: V
η
add
out
DS
L
= 20.5 dB TYP. (V
= 40.0 dBm TYP. (V
= 7.5 V MAX.
= 68% TYP. (V
79A (Pb-Free)
Package
DATA SHEET
DS
DS
= 7.5 V, I
Marking
= 7.5 V, I
DS
W5
= 7.5 V, I
Dset
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Dset
= 200 mA, f = 460 MHz, P
Dset
= 200 mA, f = 460 MHz, P
SILICON POWER MOS FET
= 200 mA, f = 460 MHz, P
NE5531079A
Supplying Form
in
= 25 dBm)
in
= 10 dBm)
in
= 25 dBm)
2009

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NE5531079A Summary of contents

Page 1

... FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz under the 7 ...

Page 2

... DS DS μ DSS DSS f = 460 MHz 7.5 V, out dBm 200 mA (RF OFF) add Dset Note L Data Sheet PU10752EJ01V0DS NE5531079A MIN. TYP. MAX. Unit − 6.0 7.5 V 1.15 1.55 2.05 V − − 2.0 A − dBm MIN. TYP. MAX. Unit − ...

Page 3

... R2 150 Ω C20 27 pF Type American Technical Ceramics American Technical Ceramics American Technical Ceramics American Technical Ceramics mm, 10 Turns ε 4.5, size = 30 × Data Sheet PU10752EJ01V0DS NE5531079A μ C22 50 Ω 100 pF RFout C21 1.8 pF Maker Murata Murata Murata − − ...

Page 4

... ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C11 C10 IN USING THE NEC EVALUATION BOARD Symbol Value μ 000 pF C10 10 pF C11 24 pF C20 27 pF C21 1.8 pF C22 100 pF R1 4.7 kΩ 150 Ω 123 C20 C21 Data Sheet PU10752EJ01V0DS NE5531079A C22 OUT ...

Page 5

... IM /IM vs. 2 TONES OUTPUT POWER 3 4.5 V –10 6.0 V 7.5 V –20 –30 –40 –50 –60 – Tones Output Power P Data Sheet PU10752EJ01V0DS NE5531079A η add Input Power P (dBm ...

Page 6

... S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 6 Data Sheet PU10752EJ01V0DS NE5531079A ...

Page 7

... MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate (Bottom View) 1.5±0.2 Source Drain Gate 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain φ Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10752EJ01V0DS NE5531079A Drain 0.8 MAX. 7 ...

Page 8

... Caution Do not use different soldering methods together (except for partial heating). 8 Soldering Conditions : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PU10752EJ01V0DS NE5531079A For soldering Condition Symbol IR260 WS260 HS350-P3 ...

Page 9

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NE5531079A Not all M8E 02. 11-1 ...

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