ATF-501P8 Avago Technologies, ATF-501P8 Datasheet - Page 2

• Manufacturer Part Number: ATF-501P8
• Description: Atf-501p8 Gaas Field Effect
• Manufacturer: Avago Technologies

2
ATF-501P8 Absolute Maximum Ratings
I
I
P
P
T
T
Figure 4. Gain.
Notes:
5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots.
6. Measurements are made on production test board, which represents a trade-off between optimal
Symbol
V
V
V
θ
DS
GS
100
CH
STG
Figure 1. Typical IV curve
(Vgs = 0.01V) per step.
diss
in max.
ch_b
80
60
40
20
DS
GS
GD
800
700
600
500
400
300
200
100
0
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
13
0
0
Cpk=1.61
Stdev=0.33
1
–3 Std
14
2
GAIN (dB)
Parameter
Drain–Source Voltage
Gate–Source Voltage
Gate Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
Vds (V)
15
3
Vgs=0.7V
Vgs=0.65V
Vgs=0.6V
Vgs=0.55V
Vgs=0.5V
4
+3 Std
[2]
16
5
[2]
[4]
[2]
[2]
17
[3]
6
[1]
Figure 2. P1dB.
Figure 5. OIP3.
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA
120
100
100
80
60
40
20
80
60
40
20
0
0
27.5
42
Cpk=1.76
Stdev=0.3
Cpk=1.1
Stdev=0.87
Units
V
V
V
A
mA
W
dBm
°C
°C
°C/W
–3 Std
43
28
–3 Std
44
28.5
45
P1dB (dBm)
OIP3 (dBm)
29
46
47
Absolute
Maximum
7
-5 to 0.8
-5 to 1
1
12
3.5
150
-65 to 150
23
29.5
30
+3 Std
+3 Std
48
30
49
30.5
50
Notes:
1. Operation of this device in excess of any one
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureT
4. Channel-to-board thermal resistance
Figure 3. PAE.
120
100
80
60
40
20
0
of these parameters may cause permanent
damage.
Derate 43.5 mW/°C for T
measured using 150°C Liquid Crystal
Measurement method.
45
Cpk=1.51
Stdev=3.38
–3 Std
55
PAE (%)
65
B
[5,6]
> 69.5°C.
+3 Std
75
B
is 25°C.
85