NTB75N06 ON Semiconductor, NTB75N06 Datasheet - Page 4

• Manufacturer Part Number: NTB75N06
• Description: Power Mosfet
• Manufacturer: ON Semiconductor

10000
1000
1000
8000
6000
4000
2000
100
100
10
10
1
1
0
0.1
10
1
Figure 9. Resistive Switching Time Variations
V
SINGLE PULSE
T
C
C
Figure 11. Maximum Rated Forward Biased
V
GATE-T O-SOURCE OR DRAIN-TO-SOURCE (V)
C
GS
iss
rss
DS
= 25 C
t
t
= 20 V
d(off)
d(on)
5
V
= 0 V
DS
t
t
Figure 7. Capacitance Variation
f
r
V
, DRAIN-TO-SOURCE VOLTAGE (V)
GS
R
G
R
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
0
vs. Gate Resistance
, GATE RESISTANCE ( )
DS(on)
1
V
V
DS
GS
100 s
= 0 V
LIMIT
5
10
1 ms
C
C
C
oss
iss
rss
10
10 ms
10
dc
15
V
I
V
D
NTP75N06, NTB75N06
T
DS
GS
= 75 A
J
= 25 C
= 30 V
= 5 V
20
http://onsemi.com
10 s
100
100
25
4
1000
800
600
400
200
12
10
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0.6
25
0
V
T
Figure 10. Diode Forward Voltage vs. Current
Q
I
J
GS
D
Figure 12. Maximum Avalanche Energy vs.
Drain-to-Source Voltage vs. Total Charge
0.64
1
= 25 C
T
10
= 75 A
J
= 0 V
, STARTING JUNCTION TEMPERATURE ( C)
V
50
SD
0.68
20
Starting Junction Temperature
Figure 8. Gate-to-Source and
, SOURCE-TO-DRAIN VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
0.72
30
75
Q
2
0.76 0.8
40
Q
100
50
T
0.84
60
125
0.86 0.92
V
70
GS
80
I
T
D
150
J
= 75 A
= 25 C
0.96
90
100
175
1