HAF1010RJ Renesas Electronics Corporation., HAF1010RJ Datasheet

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HAF1010RJ

Manufacturer Part Number
HAF1010RJ
Description
Silicon P Channel Mos Fet Series Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HAF1010RJ
Silicon P Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Cannel dissipation
Cannel temperature
Storage temperature
Notes: 1. PW
Rev.1.00,
Logic level operation to (–4 to –6 V Gate drive)
Built-in the over temperature shut-down circuit
High endurance capability against to the shut-down circuit
Latch type shut down operation (need 0 voltage recovery)
High density mounting
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
PRSP0008DD-A
(Package name: SOP-8<FP-8DA>)
Mar.03.2005,
G
4
Temperature
Sensing
Circuit
10 s, duty cycle
Item
Gate resistor
page 1 of 6
Circuit
Latch
1%
Gate
Shut-down
Circuit
I
D (pulse)
Pch
Symbol
V
V
V
Tstg
Tch
D
S
5
1
I
DSS
GSS
GSS
I
DR
D
Note2
Note1
D
S
6
2
D
S
7
3
D
8
8
7
–55 to +150
6
5
Ratings
1 2
–60
–16
–10
150
2.5
2.5
–5
–5
3
4
1, 2, 3
4
5, 6, 7, 8 Drain
REJ03G0573-0100
Source
Gate
Unit
Mar.03.2005
W
V
V
V
A
A
A
C
C
(Ta = 25°C)
Rev.1.00

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HAF1010RJ Summary of contents

Page 1

... HAF1010RJ Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc ...

Page 2

... HAF1010RJ Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Electrical Characteristics Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage ...

Page 3

... HAF1010RJ Main Characteristics Power vs. Temperature Derating 4 Test condition. When using the glass epoxy board. (FR4 1.6 mm), (PW ≤ 10s 100 Case Temperature Tc (°C) Typical Output Characteristics –10 –10 V –8 V –8 –6 –4 –2 0 –2 –4 Drain to Source Voltage V Drain to Saturation Voltage vs ...

Page 4

... HAF1010RJ Drain to Source On State Resistance vs. Temperature 500 400 300 V = – 200 100 V = – – Case Temperature Tc (°C) Body to Drain Diode Reverse Recovery Time 1000 500 200 100 µ –0.1 –0.2 –0.5 –1 Reverse Drain Current Reverse Drain Current vs ...

Page 5

... HAF1010RJ Gate to Source Voltage vs. Shutdown Time of Load-Short Test -15 -10 - 0.0001 0.001 Shutdown Time of Lord-Short Test Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ Rev.1.00, Mar.03.2005, page 200 180 160 140 ...

Page 6

... Index mark Ordering Information Part Name HAF1010RJ 2500 pcs/ Reel Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Mar.03.2005, page Package Name MASS[Typ.] FP-8DA 0 ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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