SIS402DN Vishay, SIS402DN Datasheet - Page 4

• Manufacturer Part Number: SIS402DN
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiS402DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
0.4
J
25
- Temperature (°C)
0.6
50
I
D
Limited by R
75
= 250 µA
0.8
0.01
100
0.1
100
10
T
1
J
0.1
= 25 °C
I
Limited
1.0
D(on)
DS(on)
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
T
A
GS
= 25 °C
*
> minimum V
150
V
1.2
DS
- Drain-to-Source Voltage (V)
1
GS
at which R
I
DM
BVDSS
Limited
Limited
0.015
0.012
0.009
0.006
0.003
0.000
10
DS(on)
50
40
30
20
10
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
1 s
10 s
100 ms
DC
0.1
2
V
100
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S-81733-Rev. B, 04-Aug-08
Document Number: 68684
6
10
I
D
T
T
= 19 A
J
J
= 125 °C
= 25 °C
8
100
600
10