TN0606 Supertex, Inc., TN0606 Datasheet

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TN0606

Manufacturer Part Number
TN0606
Description
N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 100pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TN0606
Device
Package Option
TN0606N3-G
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FET
-55
O
C to +150
BV
300
Value
BV
BV
±20V
DSS
DGS
(V)
60
DSS
O
O
/BV
C
C
DGS
Pin Confi guration
Product Marking
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coeffi cient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
R
(max)
1.5
DS(ON)
(Ω)
Y Y W W
0606
TN
YY = Year Sealed
WW = Week Sealed
DRAIN
TO-92 (N3)
TO-92 (N3)
I
(min)
D(ON)
3.0
(A)
= “Green” Packaging
SOURCE
GATE
TN0606
V
(max)
2.0
GS(th)
(V)

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TN0606 Summary of contents

Page 1

... BV /BV DSS DGS (V) 60 Pin Confi guration Value BV DSS BV DGS ±20V Product Marking - +150 O C 300 DS(ON) D(ON) (max) (min) (Ω) (A) 1.5 3.0 SOURCE DRAIN GATE TO-92 (N3 Year Sealed 0606 WW = Week Sealed “Green” Packaging TO-92 (N3) TN0606 V GS(th) (max) (V) 2.0 ...

Page 2

... 1.0MHz 25V 1.5A 25Ω GEN - PULSE OUTPUT R GEN D.U.T. INPUT TN0606 † I DRM (A) 3.2 = 1.0mA = 1.0mA = 1.0mA = Max Rating = 125°C = 25V DS = 25V DS = 250mA D = 750mA D = 750mA = 750mA = 1.0A = 1.5A = 1.5A ...

Page 3

... 1.0 0.8 0.6 0.4 0 25° 100 1000 0.001 3 Saturation Characteristics (volts) DS Power Dissipation vs. Case Temperature TO- 100 125 150 ° Thermal Response Characteristics TO- 25°C C 0.01 0 (seconds) p TN0606 10V ...

Page 4

... 10V (amperes and R Variation with Temperature (th 1mA (th 10V, 0.75A DS - 100 Gate Drive Dynamic Characteristics V = 10V 40V 6 DS 172 0.5 1.0 1.5 2.0 Q (nanocoulombs) G TN0606 10 2.0 1.6 1.2 0.8 0.4 0 150 2.5 ...

Page 5

... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN0606 A020508 Side View ...

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