IPD105N04LG Infineon Technologies Corporation, IPD105N04LG Datasheet - Page 2

• Manufacturer Part Number: IPD105N04LG
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
2)
3)
4)
connection. PCB is vertical in still air.
Maximum ratings, at T
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
See figure 3 for more detailed information
See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
P
T
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
j
tot
(BR)DSS
GS(th)
, T
thJC
thJA
DS(on)
G
stg
T
minimal footprint
6 cm² cooling area
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
C
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=40 A
DS
=25 °C
=V
=40 V, V
=40 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
|R
D
D
=1 mA
D
=14 µA
D
GS
GS
DS
DS(on)max
=40 A
=25 A
=0 V,
=0 V,
=0 V
4)
,
min.
1.2
40
31
-
-
-
-
-
-
-
-
-
-55 ... 175
55/175/56
Values
Value
12.0
typ.
0.1
8.8
1.1
42
10
10
62
-
-
-
-
-
IPD105N04L G
max.
10.5
100
100
3.6
75
50
15
2
1
-
-
-
Unit
W
°C
Unit
K/W
V
µA
nA
mΩ
Ω
S
2007-12-06