NTD4815NH ON Semiconductor, NTD4815NH Datasheet - Page 3

• Manufacturer Part Number: NTD4815NH
• Description: Power Mosfet 30 V, 35 A, Single N-channel, Dpak/ipak
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN-SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
D
G
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NTD4815NH
V
GS
V
V
I
3
GS
GS
S
I
D
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 11.5 V, V
= 15 A, R
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
14.7
17.8
Min
1.8
0.0164
17.6
18.4
0.98
0.92
18.1
2.49
1.88
3.46
Typ
11.3
6.7
2.3
6.8
0.6
8.2
Max
1.2
Unit
nH
ns
ns
nC
W
V