NTD20N06 ON Semiconductor, NTD20N06 Datasheet

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NTD20N06

Manufacturer Part Number
NTD20N06
Description
Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

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NTD20N06
Power MOSFET
20 Amps, 60 Volts, N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
1. When surface mounted to an FR4 board using the minimum recommended
2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size.
MAXIMUM RATINGS
August, 2004 − Rev. 6
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Lower R
Lower V
Lower Capacitances
Lower Total Gate Charge
Lower and Tighter V
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Semiconductor Components Industries, LLC, 2004
pad size.
Derate above 25 C
Energy − Starting T
(V
L = 1.0 mH, I
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Purposes, 1/8 from case for 10 seconds
DD
− Continuous
− Non−repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 25 Vdc, V
DS(on)
DS(on)
L
(pk) = 18.4 A, V
Rating
GS
J
p
= 10 Vdc,
(T
= 25 C
v10 ms)
p
A
A
SD
v10 ms)
J
GS
= 25 C
= 100 C
= 25 C unless otherwise noted)
A
A
A
= 10 MW)
= 25 C
= 25 C (Note 1)
= 25 C (Note 2)
DS
= 60 Vdc)
Symbol
T
V
V
R
R
R
V
V
J
E
I
P
DGR
, T
DSS
DM
T
I
I
qJC
qJA
qJA
GS
GS
AS
D
D
D
L
stg
−55 to
Value
"20
"30
0.40
1.88
1.36
175
170
110
260
2.5
60
60
20
10
60
60
80
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
W
C
C
1 2
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
2
V
3
(BR)DSS
3
60 V
20N06
A
Y
WW
4
ORDERING INFORMATION
4
G
http://onsemi.com
CASE 369C
CASE 369D
R
STYLE 2
STYLE 2
= Device Code
= Assembly Location
= Year
= Work Week
DPAK−3
N−Channel
DPAK
DS(on)
37.5 mW
D
Publication Order Number:
TYP
S
Gate
Gate
DIAGRAMS
MARKING
1
1
Drain
Drain
Drain
Drain
NTD20N06/D
4
2
4
2
I
D
20 A
MAX
3
Source
3
Source

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NTD20N06 Summary of contents

Page 1

... A N−Channel MARKING DIAGRAMS 4 Drain 4 DPAK CASE 369C STYLE Drain Gate Source 4 Drain 4 DPAK−3 CASE 369D STYLE Gate Drain Source 20N06 = Device Code A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Publication Order Number: NTD20N06/D ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD20N06 NTD20N06G NTD20N06−1 NTD20N06−1G NTD20N06T4 NTD20N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD20N06 ( unless otherwise noted Vdc ...

Page 3

... Figure 3. On−Resistance versus Gate−to−Source Voltage 1.8 GS 1.6 1.4 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature NTD20N06 100 2.6 3 Figure 2. Transfer Characteristics 0.065 ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) NTD20N06 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTD20N06 1000 100 V GS ...

Page 6

... V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 I Figure 14. Diode Reverse Recovery Waveform NTD20N06 SAFE OPERATING AREA 180 160 10 ms 140 120 100 100 STARTING JUNCTION TEMPERATURE ( C) J Figure 12 ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD20N06 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 8

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD20N06/D ...

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