TK20A60U TOSHIBA Semiconductor CORPORATION, TK20A60U Datasheet - Page 5

• Manufacturer Part Number: TK20A60U
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Dtmos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
100
0.1
10
1
0.1
I D max (Continuous)
I D max (Pulse) *
* Single nonrepetitive
Curves must be derated
linearly with increase in
temperature.
pulse Tc = 25°C
Drain−source voltage V
1
0.001
0.01
Safe operating area
0.1
10
1
10μ
DC operation
Tc = 25°C
Duty=0.5
0.05
0.02
0.01
0.2
0.1
10
1 ms *
100μ
Single pulse
DS
V DSS max
100
100 μs *
(V)
1m
1000
Pulse width t
r
th
10m
5
– t
R
V
w
DD
G
w
= 25 Ω
= 90 V, L = 0.63 mH
(s)
200
160
120
−15 V
80
40
15 V
0
25
100m
TEST CIRCUIT
Channel temperature (initial) T
P DM
50
Duty = t/T
R th (ch-c) = 2.78°C/W
1
t
75
T
E
Ε AS
AS
V
– T
DD
=
B
100
ch
2
1
VDSS
WAVEFORM
I
⋅
AR
10
L
⋅
2 I
⋅
⎛
⎜
⎜
⎝
ch
125
B VDSS
V
TK20A60U
DS
(°C)
B VDSS
2008-08-28
150
−
V DD
⎞
⎟
⎟
⎠