TK50X15J1 TOSHIBA Semiconductor CORPORATION, TK50X15J1 Datasheet - Page 5

• Manufacturer Part Number: TK50X15J1
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
0.01
100
0.1
10
1
0.1
I D max (pulsed) *
I D max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
Tc = 25°C
Drain-source voltage V
1
Safe operating area
0.01
0.1
DC operation
10
10μ
Tc = 25°C
1
0.05
0.02
0.2
0.1
Duty=0.5
1 ms *
10
V DSS max
100 μs *
0.01
100μ
DS
(V)
100
1m
1000
Single Pulse
Pulse width t
r
th
5
10m
R
V
− t
G
DD
w
= 25 Ω
w
= 50 V, L = 110 μH
(S)
240
160
120
200
80
40
0
20 V
0 V
25
100m
Test circuit
Channel temperature (initial) Tch (°C)
50
P DM
Duty = t/T
R th (ch-c) = 1.2°C/W
75
1
t
E
T
AS
Ε AS
100
– T
V
DD
=
ch
B
Wave form
1
2
VDSS
I
⋅
AR
125
L
10
⋅
2 I
⋅
⎛
⎜
⎜
⎝
B VDSS
TK50X15J1
150
V
DS
B VDSS
2008-03-26
175
−
V DD
⎞
⎟
⎟
⎠