STN8882D Stanson Technology Co., Ltd., STN8882D Datasheet

no-image

STN8882D

Manufacturer Part Number
STN8882D
Description
N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN8882D is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The STN8882D
has been designed specially to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM controllers. It has been
optimized for low gate charge, low R
PIN
PIN
PIN
PIN CONFIGURATION
TO-252
TO-252
TO-252
TO-252
PART
PART
PART
PART MARKING
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Y:
Y:
Y:
Y: Year
CONFIGURATION
CONFIGURATION
CONFIGURATION (D-PAK)
MARKING
MARKING
MARKING
Year
Year
Year Code
Code
Code
Code A:
A:
A:
A: Process
Process
Process
Process Code
(D-PAK)
(D-PAK)
(D-PAK)
TO-251
TO-251
TO-251
TO-251
Code
Code
Code
DS(ON)
and fast switching speed.
N Channel Enhancement Mode MOSFET
FEATURE
FEATURE
FEATURE
FEATURE
STN
STN
STN
STN8882D
extremely low R
30V/ 35A, R
30V/35A, R
Super high density cell design for
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
8882D
8882D
8882D
Copyright © 2009, Stanson Corp.
DS(ON)
DS(ON)
STN8882D 2009. V1
@V
@V
DS(ON)
GS
= 7mΩ
GS
= 5mΩ
= 10V
= 4.5V
60.0A

Related parts for STN8882D

STN8882D Summary of contents

Page 1

... DESCRIPTION DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been ...

Page 2

... Symbol Symbol Symbol Typical Typical Typical Typical VDSS VGSS ±20 TA=25℃ ID TA=70 ℃ IDM IS TA=25℃ PD TA=70 ℃ TJ TSTG -55/150 RθJA Copyright © 2009, Stanson Corp. 60.0A Unit Unit Unit Unit 100 ℃ 150 ℃ ℃ /W 100 STN8882D 2009. V1 ...

Page 3

... Max Unit Min Min Min Typ Typ Typ Max Max Max Unit Unit Unit 30 V 1.0 3.0 V ±100 100 A 5 mΩ 7 110 S 1 4826 683.3 pF 374.9 23 114 227 97.2 195 Copyright © 2009, Stanson Corp. STN8882D 2009. V1 ...

Page 4

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN STN 8882D 8882D STN STN8882D 8882D N Channel Enhancement Mode MOSFET Copyright © 2009, Stanson Corp. STN8882D 2009. V1 60.0A ...

Page 5

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN STN 8882D 8882D STN STN8882D 8882D N Channel Enhancement Mode MOSFET Copyright © 2009, Stanson Corp. STN8882D 2009. V1 60.0A ...

Page 6

... TO-252-2L PACKAGE TO-252-2L PACKAGE PACKAGE PACKAGE OUTLINE OUTLINE OUTLINE SOP-8P OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN STN 8882D 8882D STN STN8882D 8882D N Channel Enhancement Mode MOSFET SOP-8P SOP-8P SOP-8P 60.0A Copyright © 2009, Stanson Corp. STN8882D 2009. V1 ...

Page 7

... TO-251 PACKAGE TO-251 PACKAGE PACKAGE PACKAGE OUTLINE OUTLINE OUTLINE SOP-8P OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN STN STN STN8882D N Channel Enhancement Mode MOSFET SOP-8P SOP-8P SOP-8P 8882D 8882D 8882D 60.0A Copyright © 2009, Stanson Corp. STN8882D 2009. V1 ...

Related keywords