RDX030N60 ROHM Co. Ltd., RDX030N60 Datasheet - Page 3

• Manufacturer Part Number: RDX030N60
• Description: 10v Drive Nch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
Electrical characteristics curves
1000
100
10
100
0.01
1
Fig.7 Forward Transfer Admittance
0.1
0.1
10
0.1
10
1
0.1
Fig.4 Static Drain-Source On-State
1
0.01
f=1MHz
V
Ta=25°C
Pulsed
Fig.1 Typical Capacitance vs.
DRAIN-SOURCE VOLTAGE : V
GS
Ta= −25°C
V
Pulsed
=0V
DS
vs. Drain Current
=10V
125°C
Resistance vs. Drain-Current
25°C
75°C
DRAIN CURRENT : I
Drain-Source Voltage
DRAIN CURRENT : I
1
0.1
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
1
D
D
(A)
(A)
DS
V
Pulsed
C
C
C
GS
(V)
iss
oss
rss
=10V
100
10
10
0.01
0.01
0.1
0.1
10
3.8
3.6
3.4
3.2
2.8
2.6
2.4
2.2
1
Fig.2 Typical Transfer Characteristics
1
0
4
3
2
0
0
Fig.5 Static Drain-Source
SOURCE-DRAIN VOLTAGE : V
GATE-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Fig.8 Source Current vs.
Ta=125°C
On-State Resistance vs.
Gate-Source Voltage
2
5
−25°C
75°C
25°C
0.5
Source-Drain Voltage
Ta=125°C
−25°C
75°C
25°C
10
4
I
D
1
=3A
1.5A
15
6
Ta=25°C
Pulsed
V
Pulsed
GS
SD
DS
V
Pulsed
GS
GS
= −10V
(V)
(V)
=10V
(V)
20
1.5
8
Fig.9 Dynamic Input Characteristics
16
14
12
10
8
6
4
2
0
0
7
6
5
4
3
2
1
0
5
4
3
2
1
0
-50
-50
Ta=25°C
V
I
Pulsed
D
V
Pulsed
Fig.6 Static Drain-Source
DD
Fig.3 Gate Threshold Voltage
=3A
GS
CHANNEL TEMPERATURE : T
TOTAL GATE CHARGE : Q
=300V
-25
-25
=10V
2
TEMPERATURE : T
On-State Resistance vs.
Channel Temperature
vs. Channel Temperature
0
0
4
RDX030N60
25
Rev.A
25
6
I
D
50
50
=3A
8
75
75
1.5A
ch
10
100
100 125 150
(°C)
g
V
I
D
(nC)
DS
=1mA
ch
125
12
=10V
(°C)
3/4
150
14