PH1113-100 Tyco Electronics, PH1113-100 Datasheet

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PH1113-100

Manufacturer Part Number
PH1113-100
Description
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 Ghz, 3ms Pulse, 30% Duty
Manufacturer
Tyco Electronics
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
PH1113-100
Manufacturer:
TST
Quantity:
5 000
Part Number:
PH1113-100
Manufacturer:
MA/COM
Quantity:
20 000
Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3 s Pulse, 30% Duty
Features
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
Description
M/A-COM’s PH1113-100 is a silicon bipolar NPN power tran-
sistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1113-100 can produce 25 watts of output
power with short pulse length (3µS) at 30 percent duty cycle.
The transistor is housed in a 2-lead rectangular metal-ceramic
flange package, with internal input and output impedance match-
ing networks. Diffused emitter ballast resistors and gold metal-
ization assure ruggedness and long-term reliability.
Absolute Maximum Rating at 25°C
Electrical Specifications at 25°C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
VSWR-T
Symbol
R
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
BV
I
TH(JC)
P
RL
G
CES
CES
IN
P
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Radar Pulsed Power Transistor - 100 Watts,
1.1-1.3 GHz, 3 s Pulse, 30% Duty
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
Parameter
Symbol
V
V
P
T
I
T
CES
EBO
TOT
C
stg
j
-65 to +200
Rating
350
200
3.0
9.0
70
I
V
V
V
V
V
V
V
C
CE
CC
CC
CC
CC
CC
CC
= 5 mA
Units
= 32 V
= 32V, P
= 32V, P
= 32V, P
= 32V, P
= 32V, P
= 32V, P
°C
°C
W
V
V
A
O
O
O
O
O
O
= 100 W, f = 1100, 1200, 1300 MHz
= 100 W, f = 1100, 1200, 1300 MHz
= 100 W, f = 1100, 1200, 1300 MHz
= 100 W, f = 1100, 1200, 1300 MHz
= 100 W, f = 1100, 1200, 1300 MHz
= 100 W, f = 1100, 1200, 1300 MHz
Outline Drawing
Test Conditions
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
50
F (GHz)
TEST FIXTURE
1.1
1.2
1.3
CIRCUIT
INPUT
Z IF
1
5.8 - j3.4
5.6 - j1.8
5.9 - j0.4
Z
IF
( )
Min
8.0
70
52
Z OF
9
-
-
-
-
TEST FIXTURE
PH1113-100
OUTPUT
CIRCUIT
3.0 - j1.7
3.0 - j1.5
2.8 - j1.3
Max
10.0
Z
3:1
PH1113-100
0.5
16
-
-
-
-
OF
50
( )
Units
°C/W
mA
dB
dB
W
V
-
V2.00

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PH1113-100 Summary of contents

Page 1

... Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Description M/A-COM’s PH1113-100 is a silicon bipolar NPN power tran- sistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars. Designed for common-base, class C, broadband pulsed power applications, the PH1113-100 can produce 25 watts of output power with short pulse length (3µ ...

Page 2

... M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. PH1113-100 V2.00 ...

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