RDD050N20 ROHM Co. Ltd., RDD050N20 Datasheet - Page 3

• Manufacturer Part Number: RDD050N20
• Description: 10v Drive Nch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
Electrical characteristic curves
Fig.1 Maximum Safe Operating Area
0.01
100
2.5
1.5
0.5
6.4
5.6
4.8
3.2
2.4
1.6
0.8
0.1
10
4
0
2
1
0
-50
-50
1
1
Fig.4 Gate Threshold Voltage
Fig.7 Static Drain-Source
CHANNEL TEMPERATURE : T
CHANNEL TEMPERATURE : T
Tc=25°C
Single Pulsed
DRAIN-SOURCE VOLTAGE : I
-25
-25
vs. Channel Temperature
On-State Resistance vs.
Channel Temperature
DC OPERATING
0
0
I
D
=5A
10
25
25
50
50
1ms
2.5A
75
75
100
100 125 150
100
PW=100us
V
I
D
DS
V
Pulsed
=1mA
GS
ch
=10V
ch
=10V
125
(°C)
D
(°C)
(A)
150
1000
0.05
Fig.8 Forward Transfer Admittance
0.5
0.2
0.1
10
0.1
10
5
2
1
0.05
1
0.01
Fig.2 Typical Output Characteristics
10
9
8
7
6
5
4
3
2
1
0
vs. Drain Current
0
0.1
Fig.5 Static Drain-Source
Ta=25°C
Pulsed
DRAIN-SOURCE VOLTAGE : V
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
2
10V
0.2
DRAIN CURRENT : I
DRAIN CURRENT : I
9V
On-State Resistance
vs. Drain Current
4
0.1
0.5
6
8
1
10
2
V
12
GS
8V
7V
6V
5V
1
=4V
D
14
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
D
V
Pulsed
5
(A)
DS
(A)
V
Pulsed
16
=10V
GS
10
DS
=10V
18
(V)
20
10
20
0.01
100
0.1
10
1
1.75
1.25
0.75
0.25
0.01
0
Fig.9 Reverse Drain Current vs.
100
1.5
0.5
0.1
10
2
1
0
0.1
1
SOURCE-DRAIN VOLTAGE : V
0
0
Fig.6 Static Drain-Source
0.2
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
GATE-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Source-Drain Voltage
0.3
Fig.3 Typical Transfer
5
0.4
2
On-State Resistance vs.
Gate-Source Voltage
0.5
RDD050N20
Rev.A
0.6
10
Characteristics
0.7
4
0.8
15
0.9
I
D
2.5A
=5A
6
1
20
1.1
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1.2
V
Pulsed
Ta=25°C
Pulsed
GS
V
Pulsed
8
1.3
SD
25
DS
GS
GS
=0V
(V)
1.4
=10V
(V)
(V)
3/5
1.5
10
30