RSR025P03 ROHM Co. Ltd., RSR025P03 Datasheet

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RSR025P03

Manufacturer Part Number
RSR025P03
Description
4v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
4V Drive Pch MOSFET
RSR025P03
Silicon P-channel MOSFET
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
∗ Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RSR025P03
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TL
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
±2.5
−0.8
−30
±20
±10
−10
150
125
1
Dimensions (Unit : mm)
(1) Gate
(2) Source
(3) Drain
Inner circuit
TSMT3
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
(1)
∗1
Abbreviated symbol : WY
0.95
( 3 )
( 1 )
2.9
0.4
1.9
0.95
( 2 )
(3)
(2)
∗2
Each lead has same dimensions
RSR025P03
Rev.A
1.0MAX
0.16
0.85
0.7
(1) Gate
(2) Source
(3) Drain
1/4

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RSR025P03 Summary of contents

Page 1

... I D ∗1 ± −0 ∗1 − ∗ 150 Tch −55 to +150 Tstg Symbol Limits ∗ Rth(ch-a) 125 RSR025P03 1.0MAX 2.9 0.85 0.7 0 0.95 0.95 0.16 1.9 Each lead has same dimensions Abbreviated symbol : WY (3) (1) ∗2 ∗1 (2) (1) Gate (2) Source (3) Drain Unit ...

Page 2

... −2.5A ∗ − − ∗ − − R =6Ω 1 Min. Typ. Max. Unit − − −1.2 = −0.8A RSR025P03 Conditions =0V DS = −1mA D = −10V GS = −4. − −1.2A D − − =10Ω G Conditions =0V GS Rev.A 2/4 ...

Page 3

... Resistance vs. Drain Current 1000 Ciss Coss 100 Crss Ta=25℃ f=1MHz VGS= 0.01 0 Drain-Source Voltage : -VDS [V] Fig.8 Typical Capacitance vs. Drain-Source Voltage RSR025P03 1000 Ta=25℃ pulsed VGS= - 4.0V - 4.5V - 10V 100 10 4.0 0.01 0.1 1 Drain Current : -ID [A] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-4.5V Ta=125℃ ...

Page 4

... Operation in this area is limited by R DN(ON) Pw=100µs (V =10V 0.1 Ta=25°C Single Pulsed 30 30 0.8t (mm) Mounted on a ceramic board 0.01 0 Drain Source Voltage : V (V) DS Fig.11 Safe operating area 2.0 RSR025P03 10 Ta=25℃ VGS=0V pulsed 1 0.1 0.01 100 0.0 0.5 1.0 1.5 Source-Drain Voltage : -VSD [V] Fig.12 Reverse Drain Current vs. Source-Drain Voltage Rev.A 2.0 4/4 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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