RSR025N03 ROHM Co. Ltd., RSR025N03 Datasheet

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RSR025N03

Manufacturer Part Number
RSR025N03
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
4V Drive Nch MOS FET
RSR025N03
Silicon N-channel
MOS FET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3) .
Power switching, DC / DC converter.
∗1 Pw≤100µs, Duty cycle≤2%
∗2 Mounted on a ceramic board.
∗2 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Channel to ambient
Type
RSR025N03
Structure
Features
Packaging specifications
Thermal resistance
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Taping
Symbol
Symbol
3000
V
TL
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to 150
Limits
Limits
125
±2.5
±10
150
0.8
3.2
30
20
1
°C / W
(1) Gate
(2) Source
(3) Drain
Unit
External dimensions (Unit : mm)
TSMT3
Unit
°C
°C
W
V
V
A
A
A
A
∗A protection diode is included between the gate and
Abbreviated symbol : QY
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
0.95
( 3 )
( 1 )
Equivalent circuit
(1)
2.9
0.4
1.9
0.95
( 2 )
∗1
Each lead has same dimensions
1.0MAX
0.16
0.85
(3)
(2)
0.7
RSR025N03
Rev.C
∗2
(1)
(3)
(1) Gate
(2) Source
(3) Drain
(2)
1/3

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RSR025N03 Summary of contents

Page 1

... ∗ ∗ °C Tch 150 −55 to 150 °C Tstg Limits Unit ∗ ° 125 RSR025N03 1.0MAX 2.9 0.85 0.4 0 0.95 0.95 0.16 1.9 Each lead has same dimensions Abbreviated symbol : QY Equivalent circuit (3) (3) ∗2 (1) (1) (2) ∗1 (2) (1) Gate ∗1 ESD PROTECTION DIODE (2) Source ∗ ...

Page 2

... R G ∗ − 2.9 4 15V DD ∗ − − =5V 0 ∗ − − =2.5A 0 Min. Typ. Max. Unit ∗ − − =3.2A RSR025N03 Conditions =0V DS =0V GS =0V GS =1mA D =10V GS =4.5V GS =4V GS =10V DS 15V DD Conditions =0V GS Rev.C 2/3 ...

Page 3

... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 =4.5V V Ta=125°C GS Pulsed Ta=75°C Ta=25°C Ta= −25°C 100 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) RSR025N03 10 Ta=25°C =15V =2. =10Ω Pulsed ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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