RTR040N03 ROHM Co. Ltd., RTR040N03 Datasheet

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RTR040N03

Manufacturer Part Number
RTR040N03
Description
2.5v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
2.5V Drive Nch MOS FET
RTR040N03
Silicon N-channel
MOS FET
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
Power switching, DC / DC converter.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Source current
(Body diode)
∗ Mounted on a ceramic board
Type
RTR040N03
Channel to ambient
Application
Structure
Features
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Parameter
Package
Code
Basic ordering unit (pieces)
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TL
Rth (ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
±4.0
125
±16
150
0.8
1.0
30
12
16
(1) Gate
(2) Source
(3) Drain
External dimensions (Unit : mm)
TSMT3
°C / W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Abbreviated symbol : QV
Equivalent circuit
0.95
( 3 )
( 1 )
2.9
0.4
1.9
0.95
( 2 )
(1)
Each lead has same dimensions
∗1
1.0MAX
0.16
0.85
0.7
Rev.A
RTR040N03
(3)
(2)
∗2
(1) Gate
(2) Source
(3) Drain
1/4

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RTR040N03 Summary of contents

Page 1

... A S ∗ ∗ °C Tch 150 −55 to +150 °C Tstg Symbol Limits Unit ∗ ° 125 RTR040N03 1.0MAX 2.9 0.85 0.4 0 0.95 0.95 0.16 1.9 Each lead has same dimensions Abbreviated symbol : QV Equivalent circuit (3) ∗2 (1) ∗1 (2) (1) Gate ∗1 ESD PROTECTION DIODE (2) Source (3) Drain ∗ ...

Page 2

... R =10Ω G ∗ − V 15V 5.9 8 4.5V GS ∗ − − =3.75Ω ∗ L − − 2 =10Ω G Min. Typ. Max. Unit − − 1 0.8A RTR040N03 Conditions =0V DS = 1mA 4.0A D Conditions =0V GS Rev.A 2/4 ...

Page 3

... GATE SOURCE VOLTAGE : V Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voletage 1000 Ta=25°C f=1MHz V 100 10 0.01 0 DRAIN SOURCE VOLTAGE : V DS Fig.8 Typical Capacitance vs. Drain-Source Voltage RTR040N03 1000 =4.5V GS 100 10 10 0.01 0.1 1 DRAIN CURRENT : I Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 100 0.01 ...

Page 4

... D.U. Fig.11 Switching Time Test Circuit (Const.) D.U. Fig.13 Gate Charge Test Circuit DS DS RTR040N03 Pulse Width 90% 50% 50% 10 10% 10% 90% 90 d(on) r d(off off Fig.12 Switching Time Waveforms ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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