RZR020P01 ROHM Co. Ltd., RZR020P01 Datasheet

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RZR020P01

Manufacturer Part Number
RZR020P01
Description
1.5v Drive Pch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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1.5V Drive Pch MOSFET
Silicon P-channel MOSFET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package
4) Low voltage drive (1.5V).
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Channel to ambient
Source current
(Body diode)
∗ When mounted on a ceramic board.
c
www.rohm.com
Type
RZR020P01
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
RZR020P01
(TSMT3).
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Taping
Symbol
Symbol
3000
V
V
TL
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
−0.8
−12
±10
150
125
1.0
±2
±6
−6
1/4
°C / W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
Inner circuit
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Dimensions (Unit : mm)
TSMT3
(1)
Abbreviated symbol : ZE
0.95
( 3 )
( 1 )
2.9
0.4
1.9
∗1
0.95
( 2 )
(3)
(2)
∗2
Each lead has same dimensions
1.0MAX
0.16
0.85
0.7
(1) Gate
(2) Source
(3) Drain
2009.03 - Rev.A

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RZR020P01 Summary of contents

Page 1

... Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V). Applications Switching Packaging specifications Package Taping TL Type Code Basic ordering unit (pieces) 3000 RZR020P01 Absolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage V DSS Gate-source voltage V GSS Continuous I D Drain current ...

Page 2

... RZR020P01 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage I GSS −12 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −0.3 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward transfer admittance Y fs Input capacitance C iss ...

Page 3

... RZR020P01 Electrical characteristics curves 4 Ta=25°C -10V Pulsed 3.5 -4.5V 3 -2.5V 2.5 -1.8V 2 1.5 -1. -1. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -V [V] DS Fig.1 Typical Output Characteristics( Ⅰ ) 1000 Ta=25° -1.5V Pulsed -1. -2. -4.5V GS 100 10 0 DRAIN-CURRENT : -I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ ) 1000 V = -1.8V GS Pulsed 100 Ta=125° ...

Page 4

... RZR020P01 10 V =0V GS Pulsed 1 Ta=125°C 0.1 Ta=75°C Ta=25°C Ta=-25°C 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25° - -2. 10Ω G Pulsed TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics ...

Page 5

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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