RTQ030P02 ROHM Co. Ltd., RTQ030P02 Datasheet
Home Datasheets MOSFETs, GaNFETs - Single RTQ030P02
Manufacturer Part Number
RTQ030P02
Description
2.5v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Available stocks
Part Number:
RTQ030P02 T146
Transistor
2.5V Drive Pch MOS FET
RTQ030P02
Silicon P-channel MOSFET
1) Low On-resistance.(110mΩ at 2.5V)
2) High Power Package.
3) High speed switching.
4) Low voltage drive.(2.5V)
DC-DC converter
∗ 1 Pw
∗ 2 Mounted on a ceramic board
Channel to ambient
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗ Mounted on a ceramic board.
Type
RTQ030P02
Applications
Structure
Features
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
≤
10µs, Duty cycle
Parameter
Package
Code
Basic ordering unit
(pieces)
Parameter
≤
1%
Continuous
Pulsed
Continuous
Pulsed
Symbol
Taping
V
V
Tstg
Tch
3000
I
I
P
DSS
GSS
I
I
DP
SP
TR
D
S
D
Rth(ch-a)
Symbol
∗ 1
∗ 1
∗ 2
−55 to +150
Limits
1.25
−20
±12
150
∗
±12
±3
−1
−4
Limits
100
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
External dimensions (Unit : mm)
Equivalent circuit
TSMT6
Unit
°C
°C
V
V
A
A
A
A
W
(6)
(1)
1pin mark
°C / W
Unit
(6)
Abbreviated symbol : TS
(5)
(2)
0.95
(1)
(5)
∗2
2.9
1.9
0.4
0.95
(2)
(4)
(3)
Each lead has same dimensions
∗1
(4)
(3)
1.0MAX
0.16
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
0.85
0.7
RTQ030P02
0 ~ 0.1
Rev.A
1/4
Related parts for RTQ030P02
RTQ030P02 Summary of contents
... A DP − ∗ 1 − ∗ 1. °C Tch 150 −55 to +150 °C Tstg Symbol Limits ∗ Rth(ch-a) 100 RTQ030P02 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) ( 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TS (5) (4) ∗2 ∗1 (1) Drain (2) Drain (3) Gate ...
... Min. Typ. Max. Unit − − −1 RTQ030P02 Conditions = ±12V =− =− 20V =− 10V, I =− =− =−4.5 V ...
... R G pulsed t f 100 t d(off) t d(on 100 0.01 0.1 1 Drain Current : −I [A] D Fig.8 Switching Characteristics RTQ030P02 1000 Ta=125°C 75°C 25°C −25°C 100 10 0 Drain Current : −I [A] D Fig.3 Static Drain−Source On−State vs.Drain Current Resistance 10 =−2.5V GS Ta=125°C 75°C 25° ...
... D.U. Fig.10 Switching Time Measurement Circuit (Const D.U. Fig.12 Gate Charge Measurement Circuit RTQ030P02 Pulse Width V GS 10% 50% 50% 10 d(on) r d(off off Fig.11 Switching Waveforms Qgs Qgd Charge Fig ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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