RUE002N02 ROHM Co. Ltd., RUE002N02 Datasheet

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RUE002N02

Manufacturer Part Number
RUE002N02
Description
1.2v Drive Nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Part Number:
RUE002N02
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ROHM
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RUE002N02
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Part Number:
RUE002N02(N)
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RUE002N02TL
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RUE002N02TL
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1.2V Drive Nch MOSFET
Silicon N-channel
MOSFET
Switching
1) Fast switching speed.
2) Low voltage drive (1.2V) makes this
3) Drive circuits can be simple.
Channel to ambient
∗ Each terminal mounted on a recommended land
c
www.rohm.com
Type
RUE002N02
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Thermal resistance
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Structure
Applications
Features
Packaging specifications
Absolute maximum ratings (Ta=25°C)
RUE002N02
2009 ROHM Co., Ltd. All rights reserved.
device ideal for portable equipment.
Package
Code
Basic ordering unit
(pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
3000
TL
Symbol
V
I
P
V
Tstg
Tch
DP
GSS
I
D
DSS
D
Rth(ch-a)
Symbol
1
2
−55 to +150
Limits
±200
±400
150
150
20
±8
Limits
833
1/4
Unit
mW
mA
mA
°C
°C
V
V
°C / W
Unit
(2)
Dimensions (Unit : mm)
Inner circuit
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1)Source
(2)Gate
(3)Drain
EMT3
Abbreviated symbol : QR
∗1
(3)
(1)
(1) Source
(2) Gate
(3) Drain
∗2
2009.06 - Rev.A

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RUE002N02 Summary of contents

Page 1

... Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Packaging specifications Package Taping Code TL Type Basic ordering unit 3000 (pieces) RUE002N02 Absolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage V Gate-source voltage V Continuous Drain current Pulsed I DP ...

Page 2

... RUE002N02 Electrical characteristics (Ta=25°C) Symbol Parameter I Gate-source leakage GSS V Drain-source breakdown voltage (BR)DSS I Zero gate voltage drain current DSS V Gate threshold voltage GS(th) ∗ Static drain-source on-state R DS(on) resistance ∗ Forward transfer admittance fs C Input capacitance iss C Output capacitance oss C Reverse transfer capacitance rss ∗ ...

Page 3

... RUE002N02 Electrical characteristics curves 0.5 Ta=25°C Pulsed 0 1. 1. 2. 0.2 0.4 0.6 0.8 DRAIN-SOURCE VOLTAGE : V [V] DS Fig.1 Typical Output Characteristics( Ⅰ ) 10000 Ta= 25° 1.2V GS Pulsed 4.0V GS 1000 100 0.001 0.01 0.1 DRAIN-CURRENT : I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ ) ...

Page 4

... RUE002N02 10V DS Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 DRAIN-CURRENT : I [A] D Fig.10 Forward Transfer Admittance vs. Drain Current 1000 Ta =25° Pulsed 100 t d(off d(on 0.01 0.1 DRAIN CURRENT : I (A) D Fig.13 Switching characteristics Measurement circuit Fig.1-1 Switching time measurement circuit Notice This product might cause chip aging and breakdown under the large electrified environment ...

Page 5

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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