SIHFL911 Vishay, SIHFL911 Datasheet

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SIHFL911

Manufacturer Part Number
SIHFL911
Description
Power Mosfet
Manufacturer
Vishay
Datasheet
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91196
S09-1287-Rev. C, 13-Jul-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 4.4 A, dI/dt ≤ - 75 A/µs, V
= - 25 V, starting T
D
(Ω)
SOT-223
G
D
a
S
a
J
= 25 °C, L = 7.7 mH, R
c
c
V
b
GS
DD
= - 10 V
e
≤ V
G
DS
P-Channel MOSFET
e
, T
Single
- 100
J
8.7
2.2
4.1
≤ 150 °C.
SOT-223
IRFL9110PbF
SiHFL9110-E3
IRFL9110
SiHFL9110
g
S
= 25 Ω, I
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
1.2
at - 10 V
AS
T
T
= - 4.4 A (see fig. 12).
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infrared, or wave soldering techniques. Its
unique
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due
to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
package
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFL9110, SiHFL9110
SOT-223
IRFL9110TRPbF
SiHFL9110T-E3
IRFL9110TR
SiHFL9110T
design
design,
- 55 to + 150
allows
a
a
LIMIT
- 0.69
0.025
0.017
- 100
300
± 20
- 1.1
- 8.8
- 1.1
0.31
- 5.5
100
3.1
2.0
low
a
a
Vishay Siliconix
d
for
on-resistance
easy
www.vishay.com
automatic
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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SIHFL911 Summary of contents

Page 1

... 100 ° ° °C A for Ω 4.4 A (see fig. 12 ≤ 150 ° IRFL9110, SiHFL9110 Vishay Siliconix device design, low on-resistance package design allows for easy SOT-223 a IRFL9110TRPbF a SiHFL9110T-E3 a IRFL9110TR a SiHFL9110T SYMBOL LIMIT ...

Page 2

... IRFL9110, SiHFL9110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91196 S09-1287-Rev. C, 13-Jul-09 IRFL9110, SiHFL9110 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFL9110, SiHFL9110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91196 S09-1287-Rev. C, 13-Jul-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91196 S09-1287-Rev. C, 13-Jul-09 IRFL9110, SiHFL9110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFL9110, SiHFL9110 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

Page 7

... D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRFL9110, SiHFL9110 Vishay Siliconix + + P. www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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