SIHFIB16N50K Vishay, SIHFIB16N50K Datasheet

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SIHFIB16N50K

Manufacturer Part Number
SIHFIB16N50K
Description
Power Mosfet
Manufacturer
Vishay
Datasheet
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Drain current limited by maximum junction temperature.
Document Number: 91348
S-Pending-Rev. A, 08-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
TO-220 FULLPAK
(nC)
(V)
≤ 6.7 A, dI/dt ≤ 500 A/µs, V
(Ω)
J
= 25 °C, L = 13 mH, R
a
G
e
D
c
a
a
S
b
DD
V
GS
G
≤ V
= 25 Ω, I
G
= 10 V
DS
N-Channel MOSFET
, T
J
Single
500
≤ 150 °C.
89
24
44
AS
= 6.7 A, dV/dt = 17 V/ns (see fig. 12a).
D
S
d
WORK-IN-PROGRESS
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.290
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
SiHFIB16N50K-E3
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Lead (Pb)-free
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
Requirement
Ruggedness
and Current
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
SiHFIB16N50K
± 30
0.36
500
290
300
6.7
4.2
6.7
4.5
1.1
27
45
24
10
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
RoHS
COMPLIANT
W
V
A
A
1

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SIHFIB16N50K Summary of contents

Page 1

... ° 100 ° ° for screw = 6.7 A, dV/ V/ns (see fig. 12a). AS ≤ 150 ° WORK-IN-PROGRESS SiHFIB16N50K Vishay Siliconix Results in Simple Drive g SYMBOL LIMIT V 500 DS V ± 6 4 0.36 E 290 ...

Page 2

... SiHFIB16N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ...

Page 3

... PULSE WIDTH Tj = 150°C 0.01 0 Drain-to-Source Voltage (V) Fig Typical Output Characteristics Document Number: 91348 S-Pending-Rev. A, 08-Jan-09 100.00 10.00 1.00 0.10 5.0V 0.01 10 100 5.0V 10 100 SiHFIB16N50K Vishay Siliconix 150° 25° 50V 20μs PULSE WIDTH 4.0 5.0 6.0 7.0 8 Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics 3.0 6. 2.5 2.0 1.5 1 ...

Page 4

... SiHFIB16N50K Vishay Siliconix 100000 0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = iss 1000 C oss 100 C rss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 6.7A 400V 10 250V 100V ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91348 S-Pending-Rev. A, 08-Jan-09 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - SiHFIB16N50K Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V ...

Page 6

... SiHFIB16N50K Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 700 TOP 600 BOTTOM 6.7A 500 400 300 200 100 100 Starting Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel SiHFIB16N50K Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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