SIHFIB9N60A Vishay, SIHFIB9N60A Datasheet

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SIHFIB9N60A

Manufacturer Part Number
SIHFIB9N60A
Description
Power Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Drain current limited by maximum junction.
Document Number: 91346
S-82622-Rev. B, 17-Nov-08
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
(Max.) (nC)
(nC)
(nC)
(V) at T
≤ 9.2 A, dI/dt ≤ 50 A/µs, V
(Ω)
J
J max.
= 25 °C, L = 6.8 mH, R
a
G
e
D
c
a
a
S
DD
b
V
≤ V
GS
G
= 10 V
DS
= 25 Ω, I
, T
G
J
N-Channel MOSFET
Single
≤ 150 °C.
650
49
13
20
AS
= 9.2 A (see fig. 12).
d
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.75
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
SiHFIB9N60A-E3
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Lead (Pb)-free
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• High Voltage Isolation = 2.5 kV
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
• Active Clamped Forward
Requirement
Ruggedness
and Current
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
± 30
0.48
600
290
300
9.2
3.5
9.2
6.0
5.0
1.1
RMS
37
60
10
SiHFIB9N60A
Vishay Siliconix
(t = 60 s, f = 60 Hz)
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
RoHS
W
COMPLIANT
V
A
A
1

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SIHFIB9N60A Summary of contents

Page 1

... ° 100 ° ° for screw = 9.2 A (see fig. 12). AS ≤ 150 °C. J SiHFIB9N60A Vishay Siliconix Results in Simple Drive Hz) RMS SYMBOL LIMIT V 600 DS V ± 9 3 ...

Page 2

... SiHFIB9N60A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ...

Page 3

... Fig Typical Output Characteristics Document Number: 91346 S-82622-Rev. B, 17-Nov-08 100 10 1 4.7V ° 0.1 100 4.0 3.0 2.5 2.0 1.5 1.0 0.5 ° 0.0 -60 -40 -20 100 Fig Normalized On-Resistance vs. Temperature SiHFIB9N60A Vishay Siliconix T = 150 C ° J ° 50V DS 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9 Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics ...

Page 4

... SiHFIB9N60A Vishay Siliconix 2400 1MHz iss rss gd 2000 oss ds gd iss 1600 oss 1200 800 rss 400 Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. ...

Page 5

... Document Number: 91346 S-82622-Rev. B, 17-Nov-08 125 150 ° 0.001 0. Rectangular Pulse Duration ( Driver + - SiHFIB9N60A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... SiHFIB9N60A Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 600 TOP 500 BOTTOM 400 300 200 100 100 Starting T , Junction Temperature ( 4.1A 5.8A 9.2A 125 150 ° ...

Page 7

... SD • D.U.T. - device under test Period D = P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel SiHFIB9N60A Vishay Siliconix + + P.W. Period www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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