SIE848DF Vishay, SIE848DF Datasheet - Page 3

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SIE848DF

Manufacturer Part Number
SIE848DF
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIE848DF-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIE848DF-T1-E3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68821
S-82581-Rev. A, 27-Oct-08
0.0022
0.0020
0.0018
0.0016
0.0014
0.0012
0.0010
100
80
60
40
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
V
= 20 A
0.5
GS
20
20
V
= 10 thru 4 V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
1.0
- Total Gate Charge (nC)
V
GS
I
D
GS
V
Gate Charge
- Drain Current (A)
DS
40
= 4.5 V
40
V
= 10 V
GS
= 15 V
1.5
= 3 V
V
60
60
GS
V
DS
2.0
= 2 V
= 24 V
80
80
2.5
New Product
3.0
100
100
8000
7000
6000
5000
4000
3000
2000
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
15
10
5
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
0.5
5
= 25 A
V
V
C
C
DS
GS
Transfer Characteristics
0
T
iss
oss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
10
25
Capacitance
T
V
C
GS
= 125 °C
1.5
T
15
50
= 10 V
C
T
Vishay Siliconix
= 25 °C
C
= - 55 °C
V
75
GS
2.0
20
SiE848DF
= 4.5 V
100
www.vishay.com
2.5
25
125
150
3.0
30
3

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