SIE812DF Vishay, SIE812DF Datasheet - Page 3

• Manufacturer Part Number: SIE812DF
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 74337
S-62025-Rev. A, 16-Oct-06
0.0030
0.0028
0.0026
0.0024
0.0022
0.0020
100
80
60
40
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
V
GS
I
D
= 10 thru 6 V
V
20
= 25 A
GS
0.1
20
V
Output Characteristics
= 4.5 V
DS
Q
- Drain-to-Source Voltage (V)
g
40
I
V
- Total Gate Charge (nC)
D
Gate Charge
GS
0.2
- Drain Current (A)
V
40
DS
= 10 V
= 20 V
60
5 V
0.3
V
60
DS
80
= 32 V
4 V
0.4
80
100
3 V
120
0.5
100
10000
8000
6000
4000
2000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
V
I
D
GS
- 25
= 25 A
5
= 10 V, 4.5 V
V
T
V
DS
10
J
1
0
Transfer Characteristics
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
15
25
C
Capacitance
T
oss
C
= 125 °C
25 °C
50
20
2
Vishay Siliconix
25
75
C
SiE812DF
iss
100
30
3
www.vishay.com
- 55 °C
125
35
150
40
4
3