SIE850DF Vishay, SIE850DF Datasheet - Page 3

• Manufacturer Part Number: SIE850DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS
Document Number: 73987
S-72511-Rev. A, 03-Dec-07
0.0026
0.0024
0.0022
0.0020
0.0018
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
I
D
V
= 20 A
On-Resistance vs. Drain Current
GS
20
V
0.2
GS
V
= 10 V
DS
20
Output Characteristics
= 4.5 V
Q
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
I
40
V
D
GS
= 15 V
- Drain Current (A)
Gate Charge
0.4
= 10 thru 3 V
40
60
0.6
V
80
DS
= 24 V
60
0.8
100
25 °C, unless otherwise noted
2 V
New Product
120
1.0
80
10000
8000
6000
4000
2000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
I
D
= 20.8 A
- 25
5
0.5
V
V
GS
DS
Transfer Characteristics
T
0
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
- Junction Temperature (°C)
C
10
= 125 °C
25
Capacitance
1.0
V
C
C
GS
oss
iss
= 10 V, 4.5 V
T
50
15
C
Vishay Siliconix
= 25 °C
1.5
75
20
SiE850DF
100
www.vishay.com
2.0
T
C
25
= - 55 °C
125
150
2.5
30
3