SIE854DF Vishay, SIE854DF Datasheet - Page 3

• Manufacturer Part Number: SIE854DF
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69824
S-72679-Rev. A, 24-Dec-07
0.0120
0.0118
0.0116
0.0114
0.0112
0.0110
On-Resistance vs. Drain Current and Gate Voltage
60
50
40
30
20
10
10
0
8
6
4
2
0
0.0
0
0
I
D
= 13.2 A
10
10
0.4
V
DS
Output Characteristics
V
Q
GS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
20
I
20
D
= 10 V
Gate Charge
- Drain Current (A)
V
0.8
GS
V
DS
= 4 V
30
30
= 50 V
V
GS
1.2
= 10 thru 7 V
40
40
V
V
V
GS
GS
DS
1.6
= 5 V
= 6 V
= 80 V
50
50
New Product
2.0
60
60
4000
3200
2400
1600
800
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
8
4
0
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
I
D
- 25
= 13.2 A
1
20
V
V
DS
T
GS
Transfer Characteristics
0
J
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
oss
2
Capacitance
25
40
T
C
C
50
= 125 °C
V
Vishay Siliconix
3
iss
GS
T
C
= 10 V
= 25 °C
60
75
T
SiE854DF
C
4
= - 55 °C
www.vishay.com
100
80
5
125
100
150
6
3