MTDF2N06HD ON Semiconductor, MTDF2N06HD Datasheet - Page 6

• Manufacturer Part Number: MTDF2N06HD
• Description: Power Mosfet 2 Amps, 60 Volts
• Manufacturer: ON Semiconductor

the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
DM
The Forward Biased Safe Operating Area curves define
Switching between the off−state and the on−state may
) nor rated voltage (V
r
, t
f
) does not exceed 10 μs. In addition the
DSS
) is exceeded, and that the
0.01
100
0.1
10
1
0.1
V
SINGLE PULSE
T
GS
C
Figure 12. Maximum Rated Forward Biased
= 25°C
= 10 V
di/dt = 300 A/μs
Figure 11. Reverse Recovery Time (t
V
SAFE OPERATING AREA
C
DS
) of 25°C.
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
http://onsemi.com
Safe Operating Area
1
LIMIT
6
t, TIME
total power averaged over a complete switching cycle must
not exceed (T
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non−linearly with an increase of peak current in avalanche
and peak junction temperature.
A power MOSFET designated E−FET can be safely used
Standard Cell Density
High Cell Density
10
1 ms
10 ms
t
a
dc
t
rr
t
rr
100 ms
J(MAX)
t
b
rr
)
− T
100
C
)/(R
θJC
).