SIR416DP Vishay, SIR416DP Datasheet - Page 4

• Manufacturer Part Number: SIR416DP
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

SiR416DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
- 0.4
- 0.7
- 1.0
- 0.1
100
0.1
0.5
0.2
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
T
0
J
- Source-to-Drain Voltage (V)
= 150 °C
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
75
= 250 µA
0.8
T
J
0.01
100
= 25 °C
0.1
10
100
1
0.01
Limited by R
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
= 5 mA
Single Pulse
125
T
A
GS
= 25 °C
New Product
> minimum V
1.2
V
150
DS(on)
0.1
DS
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.020
0.016
0.012
0.008
0.004
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
1
1
100 ms
1 s
10 s
1 ms
10 ms
DC
2
0.01
V
100
GS
Single Pulse Power
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S09-1001-Rev. A, 01-Jun-09
5
Document Number: 64985
6
7
1
T
T
I
J
D
J
= 125 °C
8
= 25 °C
= 15 A
9
1
10
0