SIR476DP Vishay, SIR476DP Datasheet - Page 4

• Manufacturer Part Number: SIR476DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

SiR476DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
0.5
0.2
100
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
0.8
J
0.01
= 25 °C
100
Limited by R
0.1
I
10
D
100
1
0.01
= 5 mA
1.0
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
125
T
A
GS
= 25 °C
DS(on)
New Product
> minimum V
V
1.2
150
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
BVDSS Limited
1
0.005
0.004
0.003
0.002
0.001
0.000
DS(on)
200
160
120
80
40
0
10
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
1 ms
10 ms
100 ms
1 s
10 s
DC
= 20 A
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S-81715-Rev. A, 04-Aug-08
T
T
Document Number: 68764
J
J
= 25 °C
= 125 °C
6
1
8
10
1
0