SIR402DP Vishay, SIR402DP Datasheet - Page 4

• Manufacturer Part Number: SIR402DP
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiR402DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
0.4
J
25
- Temperature (°C)
0.6
50
Limited by R
I
D
75
= 250 µA
0.8
0.01
100
0.1
10
100
T
1
0.1
J
DS(on)
= 25 °C
1.0
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
125
T
*
GS
A
= 25 °C
> minimum V
V
150
1.2
DS
- Drain-to-Source Voltage (V)
1
GS
at which R
BVDSS
Limited
0.015
0.012
0.009
0.006
0.003
0.000
10
DS(on)
50
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
100 ms
1 s
10 s
DC
10 ms
0.01
2
V
100
GS
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
S-81733-Rev. B, 04-Aug-08
1
Document Number: 68683
6
10
I
D
T
T
= 20 A
J
J
= 125 °C
= 25 °C
8
100
600
10