SIR484DP Vishay, SIR484DP Datasheet - Page 4

• Manufacturer Part Number: SIR484DP
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiR484DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1.9
1.6
1.3
1.0
0.7
100
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
0
SD
J
= 150 °C
Threshold Voltage
- Source-to-Drain Voltage (V)
T
0.4
J
25
- Temperature (°C)
50
0.6
75
0.8
0.01
100
T
0.1
10
J
100
1
0.1
= 25 °C
I
D
Limited by R
= 250 µA
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
1.0
T
125
A
GS
= 25 °C
> minimum V
V
150
DS
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
0.030
0.024
0.018
0.012
0.006
0.000
10
DS(on)
40
30
20
10
0
0.01
0
is specified
100 µA
1 ms
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
0.1
2
100
V
GS
3
- Gate-to-Source Voltage (V)
1
4
Time (s)
5
S-82664-Rev. A, 03-Nov-08
Document Number: 69024
10
6
7
T
100
T
J
8
J
= 125 °C
= 25 °C
9
1000
10