BS223 Vishay, BS223 Datasheet

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BS223

Manufacturer Part Number
BS223
Description
Dmos Transistors P-channel
Manufacturer
Vishay
Datasheet
Ratings at 25 ° C ambient temperature unless otherwise specified
Inverse Diode
4/98
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous) at T
Power Dissipation at T
Junction Temperature
Storage Temperature Range
1)
Max. Forward Current (continuous)
at T
Forward Voltage Drop (typ.)
at V
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
amb
GS
= 0 V, I
= 25 °C
Dimensions in inches and (millimeters)
max .
F
= 1 mA, T
.022 (0.55)
D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.181 (4.6)
TO-92
amb
.098 (2.5)
G
j
= 25 °C
= 25 °C
S
amb
.142 (3.6)
= 25 °C
DMOS Transistors (P-Channel)
BS223
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Symbol
–V
–V
V
–I
P
T
T
Symbol
I
V
F
GS
j
S
tot
F
D
DSS
DGS
MECHANICAL DATA
FEATURES
Value
60
60
±20
1
830
150
–65 to +150
Value
1
1.0
1)
Unit
V
V
V
A
mW
°C
°C
Unit
A
V

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BS223 Summary of contents

Page 1

... Forward Voltage Drop (typ mA ° 4/98 BS223 DMOS Transistors (P-Channel) .142 (3.6) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Case: TO-92 Plastic Package Weight: approx ...

Page 2

... V, – 100 Turn-On Time Turn-Off Time Thermal Resistance Junction to Ambient Air 1) Valid provided that leads are kept at ambient temperature at a distance from case. BS223 ELECTRICAL CHARACTERISTICS Symbol Min. –V 60 (BR)DSS –I – GSSF –I – GSSR – ...

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