US5U2 ROHM Co. Ltd., US5U2 Datasheet - Page 3

• Manufacturer Part Number: US5U2
• Description: 4v Drive Nch Sbd Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
0.001
0.01
Electrical characteristics curves
0.1
10
1000
1
Fig.4 Typical Transfer Characteristics
100
0.5
10
10000
1000
1
100
10
0.01
0.01
GATE-SOURCE VOLTAGE : V
Ta=25°C
f=1MHz
V
GS
1.0
DRAIN-SOURCE VOLTAGE : V
=0V
Ta=125°C
Fig.7 Static Drain-Source
Fig.1 Typical Capacitance
−25°C
Ta=125°C
1.5
75°C
25°C
DRAIN CURRENT : I
0.1
−25°C
75°C
25°C
On-State Resistance
vs. Drain Current ( Ι )
vs. Drain-Source Voltage
0.1
2.0
2.5
1
3.0
1
D
10
(A)
V
Pulsed
GS
DS
3.5
V
Pulsed
DS
(V)
=10V
GS
Ciss
Coss
(V)
=10V
Crss
4.0
100
10
1000
100
10
10000
1000
1000
900
800
700
600
500
400
300
200
100
1
100
10
0.01
0
0.01
0
Fig.2 Switching Characteristics
GATE-SOURCE VOLTAGE : V
I
D
Fig.5 Static Drain-Source
Ta=125°C
td(on)
td(off)
=0.7A
Fig.8 Static Drain-Source
tr
−25°C
2
75°C
25°C
DRAIN CURRENT : I
DRAIN CURRENT : I
Gate-source Voltage
On-State Resistance vs.
tf
0.1
On-State Resistance
vs. Drain Current ( ΙΙ )
0.1
4
I
D
=1.4A
6
1
1
D
D
(A)
(A)
Ta=25°C
V
V
R
Pulsed
8
V
Pulsed
Ta=25°C
Pulsed
GS
DD
GS
G
GS
=10Ω
=15V
=10V
(V)
=4.5V
10
10
10
10000
1000
100
10
0.01
0.01
0.1
10
10
9
8
7
6
5
4
3
2
1
0
1
0.0
Fig.3 Dynamic Input Characteristics
0
Ta=25°C
V
I
R
Pulsed
Ta=125°C
D
Fig.9 Static Drain-Source
DD
SOURCE-DRAIN VOLTAGE : V
=1.4A
G
=10Ω
=15V
−25°C
TOTAL GATE CHARGE : Qg (nC)
75°C
25°C
Fig.6 Source Current vs.
DRAIN CURRENT : I
Ta=125°C
On-State Resistance
vs. Drain Current ( ΙΙΙ )
0.1
−25°C
75°C
25°C
0.5
Source-Drain Voltage
Rev.B
1
1
US5U2
D
1.0
2
(A)
V
Pulsed
GS
SD
V
Pulsed
=4V
GS
3/4
(V)
=0V
10
1.5
3